SMG2398N 2.2 a, 60 v, r ds(on) 194 m ? n-channel enhancement mode mos.fet elektronische bauelemente 25-nov-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mo sfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are power switch, power management in portable and battery- powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge ? fast switching ? miniature sc-59 surface mount package saves board space. product summary SMG2398N v ds (v) r ds (on) (m ? ? i d (a) 60 194@v gs = 10v 2.2 273@v gs = 4.5v 1.8 package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 1 i d @ t a =25 c i d 2.2 a i d @ t a =70 c 1.7 a pulsed drain current 2 i dm 15 a continuous source current (diode conduction) 1 i s 1.7 a power dissipation 1 p d @ t a =25 c p d 1.3 w p d @ t a =70 c 0.8 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol maximum unit maximum junction to ambient 1 t Q 5 sec r ? ja 100 c / w steady state 166 notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. top view a l c b d g h j f k e 1 2 3 1 2 3 sc-59 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
SMG2398N 2.2 a, 60 v, r ds(on) 194 m ? n-channel enhancement mode mos.fet elektronische bauelemente 25-nov-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d = 250ua gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 ua v ds = 48v, v gs = 0v - - 50 v ds = 48v, v gs = 0v, t j = 55 c on-state drain current 1 i d(on) 10 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 194 m ? v gs = 10v, i d = 2.2a - - 273 v gs = 4.5v, i d = 1.8a forward transconductance 1 g fs - 8 - s v ds = 4.5v, i d = 2.2a diode forward voltage v sd - - 1.2 v i s = 1.7a, v gs = 0v dynamic 2 total gate charge q g - 4.0 - nc v ds = 30v, v gs = 5v, i d = 2.2a gate-source charge q gs - 4.0 - gate-drain charge q gd - 2.0 - turn-on delay time t d(on) - 10 - ns v dd = 30v, v gen = 10v, r l = 30 ? , i d = 1a rise time t r - 10 - turn-off delay time t d(off) - 20 - fall time t f - 10 - source-ddrain reverse recovery time t rr - 50 - i f =1.7a, di/dt=100 a / us notes 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not su bject to production testing.
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