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| savantic semiconductor product specification silicon npn power transistors 2SD313 description with t o-220c package complement to type 2sb507 low collector saturation voltage applications designed for the output stage of 15w to 25w af power amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-peak 8 a i b base current 1 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -50~150 thermal characteristics symbol characteristics max unit r : jc thermal resistance junction to case 4.16 /w
savantic semiconductor product specification 2 silicon npn power transistors 2SD313 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =10ma; i b =0 60 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 1.0 v v be base-emitter on voltage i c =1a ; v ce =2v 1.5 v i cbo collector cut-off current v cb =60v; i e =0 0.1 ma i ceo collector cut-off current v ce =60v; i b =0 5 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =2v 40 320 h fe-2 dc current gain i c =0.1a ; v ce =2v 40 f t transition frequency i c =0.5a ; v ce =5v 5 mhz h fe-1 classifications c d e f 40-80 60-120 100-200 160-320 savantic semiconductor product specification 3 silicon npn power transistors 2SD313 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
Price & Availability of 2SD313
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