spd50p03l g opti mos ? -p power-transistor features ? p-channel ? enhancement mode ? logic level ? 175c operating temperature ? avalanche rated ? d v /d t rated ? high current rating ? pb-free lead-plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 1) a t c =100 c 1) pulsed drain current i d,pulse t c =25 c avalanche energy, single pulse e as i d =-50 a, r gs =25 ? mj reverse diode d v /d t d v /d t i d =-50 a, v ds =24 v, d i /d t =-200 a/s, t j,max =175 c kv/s gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class hbm soldering temperature iec climatic category; din iec 68-1 value 256 -200 -50 -50 150 55/175/56 -55?+175 20 -6 260 1c v ds -30 v r ds(on),max 7 m ? i d -50 a product summary pg-to252-5 type package marking lead free pg-to252-5 50p03l yes spd50p03l g rev. 1.8 page 1 2008-07-10 packing non dry tape and reel information 1000 pcs / reel
spd50p03l g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1 k/w r thja minimal footprint - - 75 6 cm 2 cooling area 2) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-250 a -1 -1.5 -2 zero gate voltage drain current i dss v ds =-30 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-30 v, v gs =0 v, t j =175 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-30 a - 8.5 12.5 m ? 8 page 2 2008-07-10
spd50p03l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 4590 6880 pf output capacitance c oss - 1220 1830 reverse transfer capacitance c rss - 1000 1500 turn-on delay time t d(on) - 14.8 22 ns rise time t r - 21.7 32 turn-off delay time t d(off) - 139 208 fall time t f - 104 156 gate char g e characteristics 3) gate to source charge q gs - -14 -19 nc gate to drain charge q gd - -35 -53 gate charge total q g v dd =-24 v, i d =-50 a, v gs =0 to -10 v - -95 -126 gate plateau voltage v plateau v dd =-24 v, i d =-50 a - -3.0 - v reverse diode diode continous forward current i s - - -50 a diode pulse current i s,pulse - - -200 diode forward voltage v sd v gs =0 v, i f =50 a, t j =25 c - -1 -1.65 v reverse recovery time t rr v r =-15 v, i f =| i s |, d i f /d t =100 a/s -3847ns reverse recovery charge q rr -4657nc 3) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-15 v, v gs =-10 v, i d =-1 a, r g =6 : v dd =-24 v, i d =-50 a rev. 1.8 page 3 2008-07-10
spd50p03l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 t c [c] p tot [w] 0 5 10 15 20 25 30 35 40 45 50 55 0 40 80 120 160 200 t c [c] -i d [a] rev. 1.8 page 4 2008-07-10
spd50p03l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -4.5 v -5.5 v v 6- -6.5 v -7 v -10 v 0 5 10 15 0 40 80 120 160 200 -i d [a] r ds(on) [m : ] c 25 c 175 0 10 20 30 40 50 60 70 80 01234 -v gs [v] -i d [a] 0 20 40 60 80 100 0204060 -i d [a] g fs [s] -3 v -5 v -4 v -2.5 v -4.5 v -3.5 v -10 v 0 20 40 60 80 100 120 140 160 180 200 0246810 -v ds [v] -i d [a] rev. 1.8 page 5 2008-07-10
spd50p03l spd50p03l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-50 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-250 p a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 3 5 7 9 11 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m : ] ciss coss crss 10 4 10 3 10 2 100 1000 10000 0 5 10 15 20 25 -v ds [v] c [pf] typ. 98%. 2% 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 175 c, typ 25 c, 98% 175 c, 98% 1 10 100 1000 0 0.5 1 1.5 2 2.5 -v sd [v] i f [a] rev. 1.8 page 6 2008-07-10
spd50p03l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 : v gs =f( q gate ); i d =-50 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 p a v 6- v 15- v 24- 0 2 4 6 8 10 12 0 20406080100120 -q gate [nc] -v gs [v] 27 28 29 30 31 32 33 34 35 36 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g c 25 c 100 c 150 1 10 100 1 10 100 1000 t av [s] -i av [a] rev. 1. 8 page 7 2008-07-10
spd50p03l g package outline pg-to252-5: outline footprint packaging tape dimensions in mm rev. 1.8 page 8 2008-07-10
rev. 1.8 page 9 2008-07-10 spd50p03l spd50p03l g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appl ication of the device, infineon technologies hereby disclaims any and all warranties and liabilitie s of any kind, including without limitation, warranties of non-infringement of intellect ual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact t he nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
