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Datasheet File OCR Text: |
savantic semiconductor product specification silicon pnp power transistors 2SB1097 d escription with to-220fa package low collector saturation voltage complement to type 2sd1588 applications for low frequency power amplifier and low speed switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector -emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a t a =25 2.0 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1097 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma; i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -0.5 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.5a -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-3a ; v ce =-1v 40 200 h fe classifications m l k 40-80 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1097 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
Price & Availability of 2SB1097 |
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