? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMB772 to-126 w (to-126 transistors) description description description description pnp si transistor suited for the output stage of 3w audio amplifier, voltage regulator, dc-dc converter and relay driver. pnp O?m 3w ?l??{ dc-dc D Q^? features features features features c low saturation voltage ?? excellent h fe linearity and high h fe t??????? maximum maximum maximum maximum ratings ratings ratings ratings ~? (t (t (t (t a a a a =25 =25 =25 =25 ) ) ) ) characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo - 40 v collect-emitter voltage ?O - lO? v ceo -30 v emitter-base voltage lO - O? v ebo - 5.0 v collector current dc ?O - ic -3.0 a collector current pulse ?O - ic -7.0 a collector power dissipation ?O? p c 3 w junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMB772 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) device device device device marking marking marking marking h h h h fe fe fe fe range range range range ????n characterstic ? symbol ? test condition y?l min ? typ ? max ? unit collector cutoff current ?O? i cbo v cb = - 30v,i e =0 -1.0 a emitter cutoff current lO? i ebo v eb = - 5v,i c =0 -1.0 a collector-base breakdown voltage ?O - O? v (br)cbo i c = - 100 a - 40 v collector-emitter breakdown voltage ?O - lO? v (br)ceo i c = - 10ma -30 v emitter-base breakdown voltage lO - O? v (br)ebo i e = - 100 a - 5 v dc current gain ? h f e (1) v ce = -2 v,i c = -20 a 30 h f e (2) v ce = -2 v,i c = -1 a 60 400 collector saturation voltage ?O?? v ce(sat) i c = -2 a, i b = -200 ma - 0. 5 v base saturation voltage O?? v be(sat) i c = -2 a, i b = -200 ma -2 .0 v transition frequency l f t v ce = - 5v,i c = - 10 0 ma 8 0 mhz collector output capacitance ? c ob v cb = - 10v,i e =0,f=1mhz 55 pf gm gm gm gm gm gm gm gm b772 b772 b772 b772 b772 b772 b772 b772 p p p p e e e e 160-320 160-320 160-320 160-320 20 20 20 20 0~400 0~400 0~400 0~400 p p p p e e e e
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMB772
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