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| power transistors www.jmnic.com BD897 silicon pnp t ransistors features b c e ?q with t o -220 package ?q with general-purpose and am plifier applications absolute maximum ratings t c =25 s y m b o l p a ra m e t e r ra t i n g u n i t v cb o collector to base voltage 60 v v ce o collector to emitter voltage 60 v v e b o emitter to base voltage 5.0 v i b base collector current i c collector current 8.0 a p c collector pow er dissipation 70 w t j junction temperature 150 t stg storage temperature -55~ 150 t o - 2 2 0 electrical characteristics t c =25 s y m b o l p a ra m e t e r c o n d i t i o n s m i n t y p e ma x u n i t i cb o collector-base cut-of f current v cb = 60v ; i e = 0 0 . 2 m a i ebo emitter-base cut-of f current v eb =5.0v ; i c = 0 2 . 0 m a i ce o collector-emitter cut-of f current v ce = 60v ; i b = 0 0 . 5 m a v cb o collector-base breakdow n voltage v (br)ceo collector-emitter breakdow n voltage i c =0.1a; i b = 0 6 0 v v ebo emitter-base breakdow n voltage v ce (sa t -1 ) collector-emitter saturation voltages i c =3 a; i b = 1 2 m a 2 . 5 v v ce (sa t -2 ) collector-emitter saturation voltages h f e - 1 f o rw ard current transfer ratio i c =3 a; v ce = 3 v 7 5 0 h f e - 2 f o rw ard current transfer ratio h f e - 3 f o rw ard current transfer ratio v be( on) 1 base-emitter on voltages i c =3 a; v ce = 3 v 2 . 5 v v be( on) 2 base-emitter on voltages f t t r ansition frepuency c ob o u t p u t c a p a c i t a n c e
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