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  ? 2000 ixys all rights reserved 1 - 2 advanced technical information v ces = 1700 v i c25 =75a v ce(sat) = 3.3 v c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) features ? high blocking voltage  jedec to-268 surface and jedec to-247 ad  low conduction losses  high current handling capability  mos gate turn-on - drive simplicity  molding epoxies meet ul 94 v-0 flammability classification applications  ac motor speed control  uninterruptible power supplies (ups)  switched-mode and resonant-mode power supplies  capacitor discharge circuits advantages  lower conduction losses than mosfets  high power density  suitable for surface mounting  easy to mount with 1 screw, (isolated mounting screw hole) 98710 (03/29/00) symbol test conditions characteristic values (t j = 25  c, unless otherwise specified) min. typ. max. bv ces i c = 250  a, v ge = 0 v 1700 v v ge(th) i c = 750  a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 v ces t j = 25  c50  a v ge = 0 v t j = 125  c 1.5 ma i ges v ce = 0 v, v ge =  20 v  100 na v ce(sat) i c = i c90 , v ge = 15 v 3.3 v t j = 125  c 2.9 v symbol test conditions maximum ratings v ces t j = 25  c to 150  c 1700 v v cgr t j = 25  c to 150  c; r ge = 1 m  1700 v v ges continuous  20 v v gem transient  30 v i c25 t c = 25  c75a i c90 t c = 90  c42a i cm t c = 25  c, 1 ms 180 a ssoa v ge = 15 v, t vj = 125  c, r g = 10  i cm =90 a (rbsoa) clamped inductive load v ces = 1350 v t sc v ge = 15 v, v ces = 1200v, t j = 125  c (scsoa) r g = 10  non repetitive 10  s p c t c = 25  c 300 w t j -55 ... +150  c t jm 150  c t stg -55 ... +150  c maximum lead temperature for soldering 300  c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260  c m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixbt) (tab) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor ixbh 42n170 ixbt 42n170 ixys reserves the right to change limits, test conditions, and dimensions.
? 2000 ixys all rights reserved 2 - 2 symbol test conditions characteristic values (t j = 25  c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 25 40 s pulse test, t  300  s, duty cycle  2 % c ies 4700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 213 pf c res 76 pf q g 169 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 52 nc t d(on) 45 ns t ri 35 ns t d(off) 400 ns t fi 1500 ns e off 36 mj t d(on) 45 ns t ri 38 ns e on 50 mj t d(off) 560 ns t fi 1900 ns e off 45 mj r thjc 0.42 k/w r thck (to-247) 0.25 k/w reverse diode characteristic values (t j = 25  c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 4.0 v t < 300 us, duty cycle d < 2% i rm i f = 25a, v ge = 0 v, -di f /dt = 50 a/us 24 a t rr v r = 100v 360 ns inductive load, t j = 125  c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10  inductive load, t j = 25  c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10  ixbh 42n170 ixbt 42n170 remarks: switching times may increase for v ce (clamp) > 0.8  v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8  v ces , higher t j or increased r g to-247 ad outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025


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Price & Availability of IXBT42N170
Newark

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IXBT42N170
29AK0378
Littelfuse Inc Transistor, 1.7Kv, 80A, To-268 Rohs Compliant: Yes |Littelfuse IXBT42N170 1000: USD17.24
500: USD20.2
100: USD21.55
25: USD22.66
10: USD23.77
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IXBT42N170-TRL
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Littelfuse Inc Ixbt42N170 Trl/ Tr |Littelfuse IXBT42N170-TRL 1000: USD13.69
500: USD14.38
200: USD14.95
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DigiKey

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IXBT42N170
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Mouser Electronics

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10: USD23.57
30: USD21.99
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120: USD20.61
270: USD18.95
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IXBT42N170-TRL
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TTI

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IXBT42N170-TRL
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TME

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IXYS Corporation Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK 30: USD22.69
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IXBT42N170A
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IXYS Corporation Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 30: USD22.25
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New Advantage Corporation

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Ozdisan Elektronik

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