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  savantic semiconductor product specification silicon npn power transistors 2sC2965 description with to-3 package high breakdown voltage fast switching speed. wide area of safe operation applications for switching regulator applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a p c collector power dissipation t c =25 150 w t j junction temperature 150  t stg storage temperature -55~150  fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sC2965 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = 8 450 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 600 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =10a; i b =2a 1.5 v v be ( sat) base-emitter saturation voltage i c =10a; i b =2a 1.5 v i cbo collector cut-off current v cb =500v ;i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =10a ; v ce =5v 7 20 f t transition frequency i c =2a ; v ce =10v 28 mhz c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 230 pf
savantic semiconductor product specification 3 silicon npn power transistors 2sC2965 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)


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Price & Availability of C2965
Newark

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