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  1 1 1/12/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. vn2106 VN2110 package options advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertex? well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. features ? commercial and military versions available ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? high input impedance and high gain applications ? motor controls ? amplifiers ? power supply circuits ? converters ? switches ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) note: see package outline section for dimensions. n-channel enhancement-mode v ertical dmos fets order number / package bv dss /r ds(on) bv dgs (max) to-92 to-236ab* die ? 60v 4.0 ? vn2106n3 100v 4.0 ? VN2110k1 VN2110nd ? mil visual screening available *same as sot-23. all units shipped on 3,000 piece carrier tape reels. product marking for sot-23: n1a ? where ? = 2-week alpha date code ordering information absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. t o-236ab (sot-23) top view t o-92 s g d s d g
2 package i d (continuous) ? i d (pulsed) power dissipation* jc ja i dr ? i drm @ t c = 25 c c/w c/w to-92 0.3a 1.0a 1.0w 125 170 0.3a 1.0a to-236ab 0.2a 0.8a 0.36w (t a = 25 c) 200 350 0.2a 0.8a ? i d (continuous) is limited by max rated t j . * t otal for package. symbol parameter min typ max unit conditions bv dss drain-to-source VN2110 100 vi d = 1ma, v gs = 0v breakdown voltage vn2106 60 v gs(th) gate threshold voltage 0.8 2.4 v v gs = v ds , i d = 1ma ? v gs(th) change in v gs(th) with temperature -3.8 -5.5 mv/ cv gs = v ds , i d = 1ma i gss gate body leakage 0.1 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current 1 av gs = 0v, v ds = max rating 100 av gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current 0.6 a v gs = 10v, v ds = 25v r ds(on) static drain-to-source 4.5 6.0 ? v gs = 5v, i d = 75ma on-state resistance 3.0 4.0 ? v gs = 10v, i d = 500ma ? r ds(on) change in r ds(on) with temperature 0.70 1.0 %/ cv gs = 10v, i d = 500ma g fs forward transconductance 150 400 m v ds = 25v, i d =0.5a c iss input capacitance 35 50 c oss common source output capacitance 13 25 pf v gs = 0v, v ds = 25v, f = 1mhz c rss reverse transfer capacitance 4 5 t d(on) turn-on delay time 3 5 t r rise time 5 8 t d(off) turn-off delay time 6 9 t f fall time 5 8 v sd diode forward voltage drop 1.2 1.8 v i sd = 0.6a, v gs = 0v t rr reverse recovery time 400 ns i sd = 0.6a, v gs = 0v notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v vn2106/VN2110 switching waveforms and test circuit electrical characteristics (@ 25 c unless otherwise specified) thermal characteristics v dd = 25v ns i d = 0.6a r gen = 25 ? ?
3 t ypical performance curves output characteristics 2.0 1.6 1.2 0.8 0.4 0 v ds (volts) v ds (volts) i d (amperes) i d (amperes) saturation characteristics maximum rated safe operating area 0.1 100 10 1 v ds (volts) i (amperes) d thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1.0 t p (seconds) t ransconductance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.2 g fs (siemens) i d (amperes) power dissipation vs. case temperature 0 150 100 50 2.0 1.0 0 125 75 25 t c ( c) p d (watts) to-92 p d = 1w t c = 25 c to-92 t a = -55 c v ds = 25v 0102030 50 40 4v 3v 0246 10 8 25 c 125 c v gs = 7v 9v 0.6 1.0 0.8 10v 8v 6v 5v 2.0 1.6 1.2 0.8 0.4 0 4v 3v 7v 9v 10v 8v 6v 5v v gs = to-92 (dc) t a = 25 c to-92 (pulsed) to-236ab 10 1.0 0.1 0.01 sot-23 (pulsed) sot-23 (dc) to-236ab p d = 0.36w t a = 25 c vn2106/VN2110
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ?fax: (408) 222-4895 www.supertex.com 1 1/12/01 ?001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. t ypical performance curves gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) t j ( c) v gs(th) (normalized) r ds(on) (normalized) v gs(th) and r ds(on) variation with temperature on-resistance vs. drain current r ds(on) (ohms) bv dss (normalized) t j ( c) transfer characteristics v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage 50 c (picofarads) v ds (volts) i d (amperes) bv dss variation with temperature 0102 03040 25 0 0246810 2.0 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 1.1 1.0 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 -50 0 50 100 150 30 pf v ds = 40v v ds = 10v v gs = 5v v gs = 10v t a = -55 c v ds = 25v 125 c 0 0.5 1.0 1.5 2.5 2.0 f = 1mhz c iss c oss c rss 0.9 90 pf 2.0 1.6 1.2 0.8 0.4 0 v gs(th) @ 1ma 25 c 0 r ds(on) @ 10v, 0.5a vn2106/VN2110


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Price & Availability of VN2110
Newark

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VN2110K1-G
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ZVN2110G
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ZVN2110A
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ZVN2110G
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VN2110K1-G
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VN2110K1-G
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ZVN2110ASTZ
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ZVN2110ASTZ
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Avnet Americas

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ZVN2110A
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ZVN2110ASTZ
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VN2110K1-G
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VN2110K1-G
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Mouser Electronics

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ZVN2110GTA
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Arrow Electronics

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Microchip Technology Inc

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RS

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Onlinecomponents.com

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Verical

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Quest Components

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TME

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ComSIT USA

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NAC

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NexGen Digital

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Rutronik

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ZVN2110GTA
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Avnet Silica

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Component Electronics, Inc

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ZVN2110A
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ES Components

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Master Electronics

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New Advantage Corporation

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ZVN2110G
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Perfect Parts Corporation

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South Electronics

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