a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv cbo i c = 20 ma 65 v bv cer i c = 10 ma r be = 75 w 30 v bv ebo i e = 10 ma 4.0 v i cer v ce = 28 v r be = 75 w 10 ma h fe v ce = 10 v i c = 2.0 a 30 120 --- p 1db v ce = 28 v i cq =2x50 ma fo = 860 mhz 100 w p g v ce = 28 v i cq =2x50 ma fo = 860 mhz 8.5 9.5 db npn silicon rf power transistor asi TPV3100 description: the asi TPV3100 is a class ab common device designed for television band iv & v applications. features include: gold metalization emitter ballasting internal matching maximum ratings i c 12 a v cc 65 v p diss 215 w @ t c = 25 o c t j -55 o c to +200 o c t stg -55 o c to +200 o c q q jc 0.80 o c/w package style .450 bal flg.(a) 1 = collector 2 = base 3 = emitter
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