maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 30 v continuous forward current i f 100 ma peak repetitive forward voltage i frm 350 ma forward surge current, tp=10ms i fsm 750 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units b vr i r =100 a30 v v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.40 0.45 v v f i f =100ma 0.74 1.00 v i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 a c t v r =1.0v, f=1 mhz 7.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 ? 5.0 ns CMKSH-3T surface mount ultramini tm triple isolated silicon schottky diodes sot-363 case central semiconductor corp. tm r2 (7-august 2003) description: the central semiconductor CMKSH-3T type contains three (3) isolated silicon schottky diodes, epoxy molded in a sot-363 surface mount package. this ultramini tm device has been designed for switching applications requiring a low forward voltage drop. marking code: kht
central semiconductor corp. tm sot-363 case - mechanical outline CMKSH-3T surface mount ultramini tm triple isolated silicon schottky diodes r2 (7-august 2003) lead code: 1) anode d1 2) anode d2 3) anode d3 4) cathode d3 5) cathode d2 6) cathode d1 marking code: kht
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