part number ne97733 eiaj 1 registered number 2sa1977 package outline 33 symbols parameters and conditions units min typ max f t gain bandwidth product at v ce = -8 v, i c = -20 ma ghz 6.0 8.5 nf noise figure at v ce = -8 v, i c = -3 ma db 1.5 3.0 |s 21e | 2 insertion power gain at v ce = -8 v, i c = -20 ma, f = 1 ghz db 8.0 12.0 h fe forward current gain ratio at v ce = -8 v, i c = -20 ma 20 40 100 i cbo collector cutoff current at v cb = -10 v, i e = 0 a -0.1 i ebo emitter cutoff current at v be = -1 v, i c = 0 a -0.1 c re 2 feedback capacitance at v cb = -10 v, i e = 0 ma, f = 1 mhz pf 0.5 0.1 p t total power dissipation mw 200 pnp silicon high frequency transistor features ? high gain bandwidth product: f t = 8.5 ghz typ ? high speed switching characteristics ? npn compliment available: ne68133 ? high insertion power gain: |s 21e | 2 = 12 db at 1 ghz description electrical characteristics (t a = 25 c) notes: 1. electronic industrial association of japan. 2. capacitance is measured with emitter and case connected to the guard terminal at the bridge. ne97733 california eastern laboratories nec?s ne97733 pnp silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 ghz. the ne97733 offers excellent performance and reliability at low cost. 33 (sot 23 style)
ne97733 absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltage v -20 v ceo collector to emitter voltage v -12 v ebo emitter to base voltage v -3 i c collector current ma -50 t j junction temperature c 150 t stg storage temperature c -65 to +200 note: 1. operation in excess of any one of these parameters may result in permanent damage. total power dissipation, p t (mw) insertion power gain, |s 21e | 2 (db) gain bandwidth product, f t (ghz) collector current, i c (ma) collector current, i c (ma) typical performance curves (t a = 25 c) dc power derating curves insertion gain vs. frequency ambient temperature, t a ( c) frequency, f (ghz) gain bandwidth product vs. collector current insertion gain vs. collector current dc current gain vs. collector current dc current gain, h fe collector current, i c (ma) insertion power gain, |s 21e | 2 (db) v ce = -8v 100 50 40 30 20 10 5 4 3 2 1 -0.1 -1.0 -10 -100 -1000 ne97733 free air 400 300 200 100 0 050 100 150 200 v ce = -8 v i c = -20 ma 35 30 25 20 15 10 5 0 -5 -10 -15 0.1 0.2 0.3 0.4 0.5 1.0 2.0 3.0 v ce = -8 v 10 8 6 4 2 0 -1 -10 -100 v ce = -8 v f = 1 ghz 5 10 15 0 -1 -10 100
typical performance curves (t a = 25 c) ne97733 dc current gain vs. collector current output capacitance vs. collector to base voltage dc current gain, h fe collector current, i c (ma) collector feed-back capacitance, c re (pf) collector to base voltage, v cb (v) v in r s v out r l1 r c1 r c2 r l2 v bb (-) 50 ? v cc (-) v ee (+) r e sampling oscilloscope v out v in 20 ns t off (delay) t on (delay) t r t f parameter symbol vin = 1 v unit typ turn-on delay time t on (delay) 1.08 ns rise time t r 0.66 ns turn-off delay time t off (delay) 0.32 ns fall time t f 0.78 ns switching characteristics v in = 1 v, v bb = -0.5 v, r c1 = r c2 r s r c r l1 r l2 r e v ee v cc ( ? )( ? )( ? )( ? )( ? ) (v) (v) 160 1 k 200 250 2.7 k 27 26.3 switching time measurement circuit -0.1 -1.0 -10 -100 -1000 1.0 10 20 30 40 50 100 v ce = -3 v v ce = -2 v v ce = -1 v f = 1 mhz 1.5 1 0.5 0 -1 -10 -100
typical scattering parameters (t a = 25 c) ne97733 v ce = -1 v, i c = -5 ma frequency s 11 s 21 s 12 s 22 k mag 1 note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain (ghz) mag ang mag ang mag ang mag ang (db) 0.50 0.428 -126.3 4.899 100.7 0.101 52.7 0.417 -54.0 0.77 16.8 0.80 0.382 -160.6 3.398 82.8 0.132 54.1 0.309 -60.2 0.97 14.1 1.00 0.374 -175.9 2.813 74.1 0.154 55.0 0.272 -64.5 1.04 11.5 1.50 0.387 155.1 2.002 56.8 0.213 54.6 0.230 -80.1 1.09 7.9 2.00 0.419 132.6 1.583 42.6 0.274 51.3 0.226 -100.1 1.07 6.0 2.50 0.461 114.5 1.323 30.6 0.336 46.5 0.247 -119.0 1.04 4.8 3.00 0.502 100.2 1.148 21.0 0.393 40.9 0.270 -133.8 1.01 4.1 4.00 0.552 82.6 0.948 7.0 0.501 29.4 0.267 -159.3 0.98 2.8 5.00 0.574 74.2 0.859 -4.4 0.599 16.0 0.218 155.9 0.98 1.6 v ce = -5 v, i c = -10 ma 0.50 0.251 -126.4 7.121 99.1 0.072 67.8 0.426 -38.9 0.91 19.9 0.80 0.213 -159.9 4.739 84.5 0.107 68.2 0.350 -39.9 1.00 16.0 1.00 0.207 -176.4 3.878 77.3 0.131 67.6 0.324 -41.9 1.03 13.7 1.50 0.225 151.5 2.708 62.5 0.191 64.2 0.288 -52.1 1.04 10.3 2.00 0.265 127.7 2.116 49.8 0.252 59.4 0.272 -67.9 1.03 8.2 2.50 0.316 109.8 1.754 38.6 0.310 53.5 0.275 -85.3 1.00 7.2 3.00 0.365 96.8 1.511 28.8 0.364 47.5 0.284 -100.1 0.98 6.2 4.00 0.428 82.3 1.218 13.5 0.467 36.4 0.269 -121.5 0.95 4.2 5.00 0.462 77.7 1.074 0.8 0.566 24.3 0.171 -148.4 0.94 2.8 v ce = -8 v, i c = -3 ma 0.50 0.626 -74.0 4.205 119.4 0.088 54.6 0.673 -32.7 0.56 16.8 0.80 0.447 -111.0 3.520 97.8 0.109 51.8 0.558 -38.2 0.79 15.1 1.00 0.374 -131.4 3.075 87.0 0.122 52.6 0.512 -41.0 0.91 14.0 1.50 0.302 -174.7 2.293 67.2 0.157 56.0 0.451 -49.9 1.05 10.2 2.00 0.310 151.1 1.824 51.9 0.202 57.8 0.427 -62.0 1.06 8.0 2.50 0.355 125.4 1.516 39.0 0.256 56.7 0.425 -76.0 1.01 7.0 3.00 0.407 106.9 1.301 28.4 0.314 53.7 0.433 -89.1 0.96 6.2 4.00 0.428 85.0 1.038 13.9 0.438 44.7 0.425 -110.2 0.90 3.7 5.00 0.503 74.6 0.930 3.7 0.573 32.3 0.328 -133.5 0.91 2.1 v ce = -8 v, i c = -20 ma 0.50 0.151 -140.9 8.095 95.5 0.067 74.7 0.389 -34.1 0.98 20.8 0.80 0.140 -172.1 5.268 83.1 0.105 73.5 0.334 -34.1 1.02 16.2 1.00 0.142 172.1 4.288 76.7 0.129 72.2 0.315 -36.1 1.03 14.1 1.50 0.170 141.7 2.974 63.2 0.191 66.9 0.285 -46.2 1.03 10.9 2.00 0.215 119.7 2.317 51.4 0.252 60.8 0.269 -61.6 1.02 8.9 2.50 0.268 104.0 1.918 40.7 0.309 54.6 0.268 -79.2 1.00 7.9 3.00 0.318 92.5 1.652 31.2 0.362 48.4 0.274 -94.3 0.98 6.6 4.00 0.379 80.9 1.332 15.8 0.459 36.9 0.257 -114.2 0.95 4.6 5.00 0.416 79.2 1.169 2.6 0.552 25.3 0.154 -134.6 0.94 3.3 mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 20 50 -50 20 10 5 4 3 2 1.5 1 0.8 0.6 0.4 0.2 -0.2 -0.4 -0.6 -0.8 -1 -1.5 -2 -3 -4 -5 -10 -20 s 11 s 22 270? 180? 225? 315? 135? 0? 90? 45? s 12 s 21 1.0 2.0 3.0 4.0 0.1 0.2 0.3 0.4 0.5 97733 v ce = -8 v, i c = -3 ma
3-174 outline dimensions (units in mm) package outline 33 (sot-23) outline 33 recommended p.c.b. layout pin connections 1. emitter 2. base 3. collector ne97733 0.16 +0.10 -0.06 0.65 +0.10 -0.15 0.4 +0.10 -0.05 1 2 3 0 to 0.1 2.8 1.9 1.5 (all leads) 0.8 1.1 to 1.4 2.9 0.2 0.95 +0.2 -0.3 +0.2 -0.1 2.4 3 2 1.9 0.95 1.0 1 0.8 exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com printed in usa on recycled paper -7/98 data subject to change without notice part number quantity packaging ne97733-t1b-a 3000 tape & reel ordering information life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale.
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