? 2003 ixys all rights reserved v ces = 1700 v i c25 = 75 a v ce(sat) = 3.3 v t fi(typ) = 290 ns ixgx 32n170h1 g = gate, c = collector, e = emitter, tab = collector features z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies ds99071(07/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 500 a v ge = 0 v note 1 t j = 125 c8ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 2.5 3.3 v t j = 125 c 3.0 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c32a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 90 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 10 ? 10 s p c t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force with chip 22...130/5...30 n/lb maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6g high voltage igbt with diode advance technical information plus247 (ixgx) g c e (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 25 33 s note 2 c ies 3500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 250 pf c res 40 pf q g 155 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 51 nc t d(on) 45 ns t ri 38 ns t d(off) 270 500 ns t fi 250 500 ns e off 15 25 mj t d(on) 48 ns t ri 42 ns e on 6.0 mj t d(off) 360 ns t fi 560 ns e off 22 mj r thjc 0.35 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v r g = 2.7 ?, v ce = 0.8 v ces note 3 inductive load, t j = 25 c i c = i c90 , v ge = 15 v r g = 2.7 ?, v ce = 0.8 v ces note 3 ixgx 32n170h1 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 4. see dh60-18a and ixgh32n170a datasheets for additional characteristics plus247 outline (ixgx) reverse diode (fred) (note 4) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 70a, v ge = 0 v, pulse test, 2.7 v t 300 s, duty cycle d 2 % i rm i f = 50a, v ge = 0 v, -di f /dt = 800 a/ s50a t rr v r = 600 v 150 n s r thjc 0.4 k/w
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