7-185 VN10K ordering information standard commercial devices bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 60v 5.0 w 0.75a VN10Kn3 order number / package advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. note: see package outline section for dimensions. to-92 package options absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 30v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. n-channel enhancement-mode vertical dmos fets features n n free from secondary breakdown n n low power drive requirement n n ease of paralleling n n low c iss and fast switching speeds n n excellent thermal stability n n integral source-drain diode n n high input impedance and high gain n n complementary n- and p-channel devices applications n n motor controls n n converters n n amplifiers n n switches n n power supply circuits n n drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) s g d
7-186 symbol parameter min typ max unit conditions bv dss drain-to-source 60 v v gs = 0v, i d = 100 m a breakdown voltage v gs(th) gate threshold voltage 0.8 2.5 v v gs = v ds , i d = 1ma d v gs(th) change in v gs(th) with temperature -3.8 mv/ cv gs = v ds , i d = 1ma i gss gate body leakage 100 na v gs = 15v, v ds = 0v i dss zero gate voltage drain current 10 m av gs = 0v, v ds = 45v 500 m av gs = 0v, v ds = 45v, t a 125 c i d(on) on-state drain current 0.75 a v gs = 10v, v ds = 10v r ds(on) 7.5 w v gs = 5v, i d = 0.2a 5.0 w v gs = 10v, i d = 500ma d r ds(th) change in r ds(th) with temperature 0.7 %/ cv gs = 10v, i d = 500ma, g fs forward transconductance 100 m v ds = 10v, i d = 500ma c iss input capacitance 48 60 c oss common source output capacitance 16 25 pf c rss reverse transfer capacitance 2 5 t (on) turn-on time 10 t (off) turn-off time 10 v sd diode forward voltage drop 0.8 v v gs = 0v, i sd = 0.5a t rr reverse recovery time 160 ns v gs = 0v, i sd = 0.5a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 m s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. VN10K package i d (continuous) 1,2 i d (pulsed) power dissipation q jc q ja i dr i drm @ t c = 25 c c/w c/w to-92 0.31a 1.0a 1.0w 125 170 0.31a 1.0a notes: 1. i d (continuous) is limited by max rated t j . 2. vn0106n3 can be used if an i d (continuous) of 0.5 is needed. thermal characteristics electrical characteristics (@ 25 c unless otherwise specified) v ds = 25v, v gs = 0v f = 1 mhz v dd = 15v, i d = 0.6a, r gen = 25 w ns static drain-to-source on-state resistance switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v w
7-187 VN10K typical performance curves output characteristics 1.0 0.8 0.6 0.4 0.2 v ds (volts) i d (amperes) i d (amperes) saturation characteristics 1.0 0.8 0.6 0.4 0.2 v ds (volts) maximum rated safe operating area 1 1000 100 10 0.1 1.0 10 0.01 v ds (volts) i d (amperes) switching waveform input voltage (volts) 10 5 0 15 5 050 10 20 30 t ?time(ns) transconductance vs. drain current 250 200 150 100 50 0 0 1000 200 400 600 800 g fs (m ) i d (ma) power dissipation vs. case temperature 0 150 100 50 2 1 125 75 25 t c ( c) p d (watts) to-92 v ds = 10v 300 m s, 2% duty cycle pulse test to-92 (dc) 0102030 50 40 v gs =10v 6v 5v 4v 2v 0246 10 8 v gs =10v 6v 4v 2v 3v w 0 10 40 output voltage (volts) 5v 3v 9v 8v 7v 0 0 0 t c = 25 c
7-188 VN10K typical performance curves transconductance vs gate-source voltage gfs (m ) i d (amperes) g fs (mhos) output conductance vs drain current on-resistance vs. gate-to-source voltage r ds(on) (ohms) bv dss (normalized) t j ( c) transfer characteristics v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage 50 40 30 20 10 0 c (picofarads) v ds (volts) v gs (volts) bv dss variation with temperature 010203040 0246810 -50 0 50 100 150 1.1 1.0 0.9 100 10 1 100 10 0246810 1.0 0.8 0.6 0.4 0.2 0 50 250 200 150 100 50 0 w v gs (volts) 1.0 0.1 0.01 0.01 0.1 1.0 v ds = 0.1v 1 reduction due to heating v ds = 10v 300 m s, 2% duty cycle pulse test v ds = 25v 80 m s, 1% duty cycle pulse test v ds = 10v 3000 m s, 2% duty cycle pulse test c iss c oss c rss
|
