continental device india limited data sheet page 1 of 3 csb857, 858 pnp plastic power transistors csd1133, 1134 npn plastic power transistors low frequency power amplifier absolute maximum ratings 857 858 1133 1134 collector-base voltage (open emitter) v cbo max. 70 70 v collector-emitter voltage (open base) v ceo max. 50 60 v collector current i c max. 4.0 a total power dissipation up to t c = 25c p tot max. 40 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 2 a; i b = 200 ma v cesat max. 1.0 v d.c. current gain i c = 1 a; v ce = 4 v h fe min. 60 max. 320 ratings (at t a =25c unless otherwise specified) limiting values 857 858 1133 1134 collector-base voltage (open emitter) v cbo max. 70 70 v collector-emitter voltage (open base) v ceo max. 50 60 v emitter-base voltage (open collector) v ebo max. 5.0 v csb857, csb858 csd1133, csd1134 pin configuration 1. base 2. collector 3. emitter 4. collector b 1 23 j m g d h a o o k n l f e c dim min. max. all diminsions in mm. a 14.42 16.51 b 9.63 10.67 c 3.56 4.83 d0.90 e 1.15 1.40 f 3.75 3.88 g 2.29 2.79 h 2.54 3.43 j0.56 k 12.70 14.73 l 2.80 4.07 m 2.03 2.92 n 31.24 odeg 7 1 2 3 4 is / iecqc 700000 is / iecqc 750100 is/iso 9002 lic# qsc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer to-220 plastic package
continental device india limited data sheet page 2 of 3 csb857, csb858 csd1133, csd1134 collector current i c max. 4.0 a collector current (peak value) i c max. 8.0 a total power dissipation up to t c = 25c p tot max. 40 w junction temperature t j max. 150 oc storage temperature t stg ?65 to +150 oc characteristics t amb = 25c unless otherwise specified 857 858 1133 1134 collector cutoff current i e = 0; v cb = 50v i cbo max. 1.0 a breakdown voltages i c = 50 ma; i b = 0 v ceo min. 50 60 v i c = 10 a; i e = 0 v cbo min. 70 v i e = 10 a; i c = 0 v ebo min. 5.0 v saturation voltage i c = 2 a; i b = 0.2 a v cesat * max. 1.0 v base emitter on voltage i c = 1 a; v ce = 4 v v be(on) * max. 1.0 v d.c. current gain i c = 0.1 a; v ce = 4 v h fe* min. 35 i c = 1.0 a; v ce = 4 v** h fe* min. 60 max. 320 transition frequency i c = 0.5 a; v ce = 4 v pnp f t typ. 15 mhz npn typ. 7.0 mhz ** h fe classification: b: 60-120 c: 100-200 d: 160-320 * pulse test
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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