GT40Q323 2006-11-01 1 toshiba insulated gate bipolar tran sistor silicon n channel igbt GT40Q323 voltage resonance inverter switching application ? enhancement-mode ? high speed: t f = 0.14 s (typ.) (i c = 40a) ? frd included between emitter and collector ? 4th generation ? to-3p (n) (toshiba package name) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 25 v @ tc = 100c 20 continuous collector current @ tc = 25c i c 39 a pulsed collector current i cp 80 a dc i f 10 diode forward current pulsed i fp 80 a @ tc = 100c 80 collector power dissipation @ tc = 25c p c 200 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance (igbt) r th (j-c) 0.625 c/w thermal resistance (diode) r th (j-c) 1.79 c/w equivalent circuit unit: mm jedec D jeita D toshiba 2-16c1c weight: 4.6 g (typ.) gate emitter collector
GT40Q323 2006-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 1200 v, v ge = 0 D D 5.0 ma gate-emitter cut-off voltage v ge (off) i c = 40 ma, v ce = 5 v 4.0 D 7.0 v collector-emitter saturation voltage v ce (sat) i c = 40 a, v ge = 15 v D 3.0 3.7 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz D 5550 D pf rise time t r D 0.18 D turn-on time t on D 0.26 D fall time t f D 0.14 0.21 switching time turn-off time t off resistive load v cc = 600 v, i c = 40 a v gg = 15 v, r g = 39 (note 1) D 0.43 D s diode forward voltage v f i f = 10 a, v ge = 0 D D 2.1 v reverse recovery time t rr i f = 10 a, di/dt = ? 20 a/ s D 0.4 D s note 1: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t d (off) t of f t r t on 0 0 t f 10% 10% 90% 90% r g v cc r l 0
GT40Q323 2006-11-01 3 collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc 20 common emitter tc = ? 40 c 80 0 0 20 40 60 2 4 6 8 v ge = 6 v 7 10 15 8 20 common emitter tc = 25 c 80 0 0 20 40 60 2 4 6 8 v ge = 6 v 7 10 15 8 common emitter v ce = 5 v 80 0 0 20 40 60 2 4 8 10 tc = 125c ? 40 25 6 6 0 1 2 3 common emitter v ge = 15 v ? 60 ? 20 20 60 100 140 i c = 80 a 10 20 40 4 5 8 20 common emitter tc = 125 c 80 0 0 20 40 60 2 4 6 8 v ge = 6 v 7 10 15
GT40Q323 2006-11-01 4 collector current i c (a) switching time ( s) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) collector current i c (a) switching time ? i c switching time ( s) gate resistance r g ( ) switching time ? r g collector-emitter voltage v ce (v) safe operating area collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 200 400 0 100 200 300 common emitter r l = 7.5 tc = 25c 0 80 160 240 320 v ce = 300 v 100 0 5 10 15 20 30000 10 100 1000 5000 common emitter v ge = 0 f = 1 mhz tc = 25c 1 10 100 1000 10000 c res 30 50 300 500 3000 10000 c oes c ies 0.01 1 20 50 0.1 1 10 3 0.03 0.05 0.3 0.5 common emitter v cc = 600 v r g = 39 v gg = 15 v tc = 25c t off t on t r t f 10 30 40 5 0.01 1 10 100 1000 0.1 1 5 3 0.03 0.05 0.3 0.5 common emitter v cc = 600 v i c = 40 a v gg = 15 v tc = 25c t off t on t r t f 1 1 10 3000 10 100 1000 300 3 5 30 50 *single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. i c max (pulsed) * i c max (continuous) 100 1000 500 3 30 300 10 ms* dc operation 1 ms* 100 s* 10 s* 1 1 10 3000 10 100 1000 300 3 5 30 50 t j 125c v gg = 20 v r g = 10 100 1000 500 3 30 300
GT40Q323 2006-11-01 5 reverse recovery time t rr (s) forward current i f (a) transient thermal impedance r th (t) (c/w) pulse width t w (s) r th (t) ? t w case temperature tc (c) i c max ? tc maximum dc collector current i c max (a) forward voltage v f (v) i f ? v f reverse recovery current l rr (a) forward current i f (a) t rr , l rr ? i f reverse recovery current l rr (a) di/dt (a/s) t rr , l rr ? di/dt reverse recovery time t rr (s) tc = 25c 10 ? 3 10 ? 5 10 ? 1 10 0 10 ? 4 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 3 10 1 diode stage igbt stage 10 ? 2 common emitter v ge = 15 v 40 0 25 10 20 30 50 75 100 125 150 common collector v ge = 0 80 10 0 20 40 60 1 2 3 4 tc = 125c ? 40 25 0.8 0.0 0.2 0.4 0.6 0 10 40 50 0 2 4 6 8 20 30 t r r l r r common collector di/dt = ? 20 a/ s tc = 25c 0.5 0.0 0.1 0.2 0.3 0.4 0 40 80 120 200 240 0 8 16 24 32 40 common collector i f = 10 a tc = 25 c t r r l r r 160
GT40Q323 2006-11-01 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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