1 - 2 ? 2000 ixys all rights reserved igbt g c e to-220ab (ixgp) v ces = 1000 v i c25 = 16 a v ce(sat) = 2.7 v ixga 8n100 ixgp 8n100 ixys reserves the right to change limits, test conditions, and dimensions. g e to-263 (ixga) c (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 1000 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 v ces t j = 25 c25 a v ge = 0 v t j = 125 c 250 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15v 2.2 2.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c16a i c90 t c = 90 c8a i cm t c = 25 c, 1 ms 32 a ssoa v ge = 15 v, t vj = 125 c, r g = 120 i cm = 16 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c54w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g 98565b (7/00) features ? international standard packages jedec to-220ab and to-263aa low v ce(sat) - for minimum on-state conduction losses mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies capacitor discharge advantages easy to mount with one screw reduces assembly time and cost high power density preliminary data sheet
2 - 2 ? 2000 ixys all rights reserved ixga 8n100 ixgp 8n100 to-263 aa (ixga) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-220 ab (ixgp) outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 v ce = 10 v 4 7.6 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 10 v, v ce = 10v 40 a c ies 595 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 34 pf c res 10 pf q g 22.5 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 4.8 nc q gc 8.5 nc t d(on) 15 ns t ri 30 ns t d(off) 600 1000 ns t fi 390 900 ns e off 2.3 5.0 mj t d(on) 15 ns t ri 30 ns e on 0.5 mj t d(off) 800 ns t fi 630 ns e off 3.7 mj r thjc 2.3 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 800 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 800 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g
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