march 2007 FDMA1023PZ dual p-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDMA1023PZ rev.b www.fairchildsemi.com 1 FDMA1023PZ dual p-channel powertrench ? mosfet ? 20v, ? 3.7a, 72m features ? max r ds(on) = 72m at v gs = ?4.5v, i d = ?3.7a ? max r ds(on) = 95m at v gs = ?2.5v, i d = ?3.2a ? max r ds(on) = 130m at v gs = ?1.8v, i d = ?2.0a ? max r ds(on) = 195m at v gs = ?1.5v, i d = ?1.0a ? low profile - 0.8 mm maximum - in the new package microfet 2x2 mm ? rohs compliant general description this device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. it features two independent p-channel mosfets with low on-state resistance for minimum conduction losses. when connected in t he typical common source configuration, bi-directional current flow is possible. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage ?20 v v gs gate to source voltage 8 v i d drain current -continuous (note 1a) ?3.7 a -pulsed ?6 p d power dissipation (note 1a) (note 1b) 1.5 w 0.7 t j , t stg operating and storage junction temperature range ?55 to +150 c r ja thermal resistance for single operation, junction to ambient (note 1a) 86 c/w r ja thermal resistance for single operation, junction to ambient (note 1b) 173 r ja thermal resistance for single operation, junction to ambient (note 1c) 69 r ja thermal resistance for single operation, junction to ambient (note 1d) 151 device marking device package reel size tape width quantity 023 FDMA1023PZ microfet 2x2 7? 8mm 3000 units microfet 2x2 pin 1 s1 g1 d2 d1 g2 s2 1 3 2 4 5 6 s1 g1 d2 d1 g2 s2 d1 d2
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = ?250 p a, v gs = 0v ?20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = ?250 p a, referenced to 25 c ?11 mv/ c i dss zero gate voltage drain current v ds = ?16v, v gs = 0v ?1 p a i gss gate to source leakage current v gs = 8v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = ?250 p a ?0.4 ?0.7 ?1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = ?250 p a, referenced to 25 c 2.5 mv/ c r ds(on) static drain to source on-resistance v gs = ?4.5v, i d = ?3.7a 60 72 m : v gs = ?2.5v, i d = ?3.2a 75 95 v gs = ?1.8v, i d = ?2.0a 100 130 v gs = ?1.5v, i d = ?1.0a 130 195 v gs = ?4.5v, i d = ?3.7a,t j =125 c 81 91 g fs forward transconductance v ds = ?5v, i d = ?3.7a 12 s dynamic characteristics c iss input capacitance v ds = ?10v, v gs = 0v, f = 1mhz 490 655 pf c oss output capacitance 100 135 pf c rss reverse transfer capacitance 90 135 pf switching characteristics t d(on) turn-on delay time v dd = ?10v, i d = ?1a v gs = ?4.5v, r gen = 6 : 9 18 ns t r rise time 12 22 ns t d(off) turn-off delay time 64 103 ns t f fall time 37 60 ns q g(tot) total gate charge v dd = ?10v, i d = ?3.7a v gs = ?4.5v 8.6 12 nc q gs gate to source gate charge 0.7 nc q gd gate to drain ?miller? charge 2.0 nc drain-source diod e characteristics i s maximum continuous drain-source diode forward current ?1.1 a v sd source to drain diode forward voltage v gs = 0v, i s = ?1.1a (note 2) ?0.8 ?1.2 v t rr reverse recovery time i f = ?3.7a, di/dt = 100a/ p s 32 48 ns q rr reverse recovery charge 15 23 nc
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.b www.fairchildsemi.com 3 notes: 1: r ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. (a) r ja = 86c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick pcb (b) r ja = 173c/w when mounted on a minimum pad of 2 oz copper (c) r ja = 69 o c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb. (d) r ja = 151 o c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test : pulse width < 300us, duty cycle < 2.0% a)86 o c/w when mounted on a 1in 2 pad of 2 oz copper. b)173 o c/w when mounted on a minimum pad of 2 oz copper. c)69 o c/w when mounted on a 1in 2 pad of 2 oz copper. d)151 o c/w when mounted on a minimum pad of 2 oz copper.
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.b www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. 0.00.51.01.52.0 0 1 2 3 4 5 6 v gs = -4.5v v gs = -3.0v v gs = -2.0v v gs = -2.5v v gs = -1.5v v gs = -1.8v pulse duration = 300 p s duty cycle = 2.0%max - i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0123456 0.6 1.0 1.4 1.8 2.2 2.6 v gs = -2.5v v gs = -2.0v v gs = -3.0v v gs = -4.5v v gs = -1.8v v gs = -1.5v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -3.7a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0123456 40 80 120 160 200 pulse duration = 300 p s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = -1.85a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 6 v dd = -5v pulse duration = 300 p s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.b www.fairchildsemi.com 5 figure 7. 0246810 0 1 2 3 4 5 i d = -3.7a v dd = -10v v dd = -5v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -15v gate charge characteristics figure 8. 0.1 1 10 100 1000 40 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 capacitance characteristics f i g u r e 9 . f o r w a r d b i a s s a f e operating area 0.1 1 10 0.01 0.1 1 10 20 v gs =-4.5v single pulse r t ja = 173 o c/w t a = 25 o c 60 1s dc 10s 100ms 10ms 1ms 100us r ds(on) limit -i d , drain current (a) -v ds , drain to source voltage (v) figure 10. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 0.5 v gs = -10v single pulse r t ja = 173 o c/w t a =25 o c single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - s i n g l e p u l s e m a x i m u m power dissipation figure 11. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 0.005 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.b www.fairchildsemi.com 6
FDMA1023PZ dual p-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worl dwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critica l components in life support devices or systems without the express written approval of fa irchild semiconduct or corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with in structions for use provided in the labeling, can be reasonably expec ted to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator ? gto ? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this datasheet contains the des ign specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be published at a later date. fairch ild semiconductor reserves the right to make changes at any ti me without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconduc tor.the datasheet is printed for reference information only. rev. i24 tm tm
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