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  tip30, tip30a,tip30b, tip30c pnp silicon power transistors  
  1 july 1968 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the tip29 series 30 w at 25c case temperature 1 a continuous collector current 3 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.24 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) tip30 tip30a tip30b tip30c v cbo -80 -100 -120 -140 v collector-emitter voltage (i b = 0) tip30 tip30a tip30b tip30c v ceo -40 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -1 a peak collector current (see note 1) i cm -3 a continuous base current i b -0.4 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 30 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 32 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 250 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 2  
  july 1968 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma (see note 5) i b = 0 tip30 tip30a tip30b tip30c -40 -60 -80 -100 v i ces collector-emitter cut-off current v ce = -80 v v ce = -100 v v ce = -120 v v ce = -140 v v be =0 v be =0 v be =0 v be =0 tip30 tip30a tip30b tip30c -0.2 -0.2 -0.2 -0.2 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 tip30/30a tip30b/30c -0.3 -0.3 ma i ebo emitter cut-off current v eb = -5 v i c =0 -1 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v i c =-0.2a i c = -1 a (see notes 5 and 6) 40 15 75 v ce(sat) collector-emitter saturation voltage i b = -125 ma i c = - 1a (see notes 5 and 6) -0.7 v v be base-emitter voltage v ce = -4 v i c = -1 a (see notes 5 and 6) -1.3 v h fe small signal forward current transfer ratio v ce = -10 v i c =-0.2a f = 1 khz 20 | h fe | small signal forward current transfer ratio v ce = -10 v i c =-0.2a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 4.17 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -1 a v be(off) = 4.3 v i b(on) = -0.1 a r l = 30 ? i b(off) = 0.1 a t p = 20 s, dc 2% 0.3 s t off turn-off time 1s
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 3  
  july 1968 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -0001 -001 -01 -10 h fe - dc current gain 1 10 100 1000 tcs632ad v ce = -4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - ma -01 -10 -10 -100 -1000 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs632ae i c = -100 ma i c = -300 ma i c = -1 a base-emitter voltage vs collector current i c - collector current - a -001 -01 -10 v be - base-emitter voltage - v -05 -06 -07 -08 -09 -10 tcs632af v ce = -4 v t c = 25c
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 4  
  july 1968 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 -100 sas632ab tip30 tip30a tip30b tip30c t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% dc operation maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 tis631ab


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Price & Availability of BD239C
Newark

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
64AH2629		 onsemi Transistor, Npn, 100V, 2A, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:30W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi BD239C 10800: USD0.458
3600: USD0.496
1000: USD0.535
500: USD0.775
100: USD0.886
10: USD0.997
1: USD1.22
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1101
BD239CTU
82C0729		 onsemi Transistor, bjt, npn,100V V(Br)Ceo,2A I(C),to-220Ab Rohs Compliant: Yes |Onsemi BD239CTU BuyNow
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DigiKey

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BD239CTU
BD239CTU-ND		 onsemi TRANS NPN 100V 2A TO220-3 500: USD0.48128
100: USD0.5678
50: USD0.7164
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BD239C
BD239C-ND		 onsemi TRANS NPN 100V 2A TO220-3 10000: USD0.44034
5000: USD0.46165
2000: USD0.48474
1000: USD0.51492
600: USD0.6321
200: USD0.74575
10: USD0.959
1: USD1.17
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638
BD239C
497-12138-ND		 STMicroelectronics TRANS NPN 100V 2A TO220 50000: USD0.15125
10000: USD0.15887
5000: USD0.17109
2000: USD0.18026
1000: USD0.20165
500: USD0.24808
100: USD0.3177
50: USD0.4278
1: USD0.54
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Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
BD239C		 onsemi Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220AB Bulk - Bulk (Alt: BD239C) 500000: USD0.124
250000: USD0.128
50000: USD0.132
25000: USD0.136
11000: USD0.14
5100: USD0.144
5000: USD0.148
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BD239C
64AH2629		 onsemi Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220AB Bulk - Bulk (Alt: 64AH2629) 1000: USD0.492
500: USD0.575
100: USD0.658
10: USD0.997
1: USD1.22
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BD239C
BD239C		 onsemi Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220AB Bulk - Bulk (Alt: BD239C) 240000: USD0.43598
120000: USD0.45005
24000: USD0.46411
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7200: USD0.49224
4800: USD0.5063
2400: USD0.52037
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BD239C
BD239C		 STMicroelectronics Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: BD239C) 5000: USD0.17303
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Mouser Electronics

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BD239C
511-BD239C		 STMicroelectronics Bipolar Transistors - BJT NPN Pwr Transistors 1: USD0.53
10: USD0.421
100: USD0.314
500: USD0.245
1000: USD0.201
2000: USD0.167
10000: USD0.158
25000: USD0.157
50000: USD0.151
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BD239C
512-BD239C		 onsemi Bipolar Transistors - BJT NPN Si Transistor Epitaxial 1: USD1.17
10: USD0.959
100: USD0.712
500: USD0.515
1200: USD0.484
2400: USD0.46
6000: USD0.44
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BD239CTU
512-BD239CTU		 onsemi Bipolar Transistors - BJT NPN Epitaxial Sil 1: USD0.52
10: USD0.432
100: USD0.366
500: USD0.336
1000: USD0.334
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STMicroelectronics

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BD239C
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100: USD0.31
500: USD0.24
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Future Electronics

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BD239C
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2500: USD0.169
1250: USD0.173
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Verical

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BD239C
81708030		 STMicroelectronics Trans GP BJT NPN 100V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube 50000: USD0.13
25000: USD0.1314
10000: USD0.1327
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500: USD0.2128
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Bristol Electronics

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BD239C
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Quest Components

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BD239C
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Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
 onsemi BD239C - NPN Epitaxial Silicon Transistor 1000: USD0.4359
500: USD0.4615
100: USD0.482
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BD239CTU
 onsemi BD239C - Bipolar Transistor, 15V, 1A, Low VCE NPN Single MCPH3 1000: USD0.4008
500: USD0.4244
100: USD0.4432
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TME

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
BD239C-ONS		 onsemi Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB 200: USD0.617
100: USD0.661
25: USD0.736
5: USD0.812
1: USD1.603
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BD239C
BD239C		 STMicroelectronics Transistor: NPN; bipolar; 115V; 2A; 30W; TO220AB 1000: USD0.214
250: USD0.23
50: USD0.256
10: USD0.289
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BD239CTU
BD239CTU		 onsemi Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB 250: USD0.606
50: USD0.65
10: USD0.725
3: USD0.823
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Ameya Holding Limited

Part # Manufacturer Description Price BuyNow  Qty.
BD239CTU
 onsemi 25: USD0.7500576
125: USD0.73122704
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1250: USD0.69514835
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ComSIT USA

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BD239C
 STMicroelectronics NPN POWER TRANSISTOR Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin RFQ
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Chip 1 Exchange

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Avnet Abacus

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BD239C-S
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Avnet Silica

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Bürklin Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
13S8050		 STMicroelectronics Bipolar junction transistor, NPN, 2 A, 115 V, THT, TO-220, BD239C 1: EUR0.53
25: EUR0.43
100: EUR0.36
250: EUR0.31
1000: EUR0.28
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EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
BD239C		 onsemi Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220AB Bulk (Alt: BD239C) BuyNow
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Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
BD239C
 onsemi Stock, ship today 1: USD0.1
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BD239CTU
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