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| savantic semiconductor product specification silicon npn power transistors 2SD844 d escription with to-3p(i) package complement to type 2sb754 high collector current :i c =7a low collector saturation voltage high power dissipation applications high current switching applications power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 50 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i e emitter current -7 a t a =25 2.5 p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD844 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 50 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =4.0a; i b =0.4a 0.4 v v be base-emitter voltage i c =4a ; v ce =1v 1.2 v i cbo collector cut-off current v cb =50v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =4a ; v ce =1v 30 f t transition frequency i c =1a ; v ce =5v 15 mhz c ob collector output capacitance f=1mhz ; v cb =10v 250 pf h fe-1 classifications o y 70-140 120-240 savantic semiconductor product specification 3 silicon npn power transistors 2SD844 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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