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  p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 1 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review the UPWLEDLPXXX product incorporates microsemi?s unique, patented packaging concept to improve the homogeneous distribution of white light. the optomite low profile package has low th ermal resistance. the package provides a broad luminous emission, typically 120. the packaging profile lends itself to increased life, critical to many white applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com anode is the smaller of the two base pads mount to circuit using 60/40 pb/sn or equivalent. maximum solder melt exposure temperature is 225c for 10 seconds. absolute maximum ratings at 25o c (unless otherwise specified) thermal characteristics (unless otherwise specified) temperature rise symbol value units junction temperature rise at 20ma dc tj mx 15 c note: the ?x x x ?trailer in the part number refers to the intensity bin followed by color rank followed by the vf cla ssification. see tables, page 2. may be used in conjunction with micorsemi lx1992led drivers. parameters symbol value unit dc forward dc drive current i f 30 ma peak forward current (non-repetitive) i fp 100 ma led operating junction temper ature tj -40 to +140 c reverse voltage v r 8 v power dissipation @ 30ma p d 125 mw operating temperature t opr -40 to +125 c storage temperature t s -45 to +140 c electrostatic discharge esd 1000 v esd classification class 1 solder reflow peak temperature (solder 10?) 225 c key features ? low profile (0.35mm;15mils) ? low vf available (<3.0v @ 5ma) ? color consistent ? luminous efficiency ? high brightness ? broad angular emission ? rugged optomite package applications ? mobile phone keypad ? panel, button, switch indicators. ? backlighting ? signage ? signals and marker lights
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 2 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review electrical parameters @ 25 c characteristic symbol test conditions min typ. max units radiant intensity i e dc drive current = 20ma w/sr luminous intensity, h luminous intensity, g luminous intensity, f i v dc drive current = 10ma dc drive current = 20ma dc drive current = 10ma dc drive current = 20ma dc drive current = 10ma dc drive current = 20ma 65 125 tbd tbd 80 140 tbd tbd mcd peak wavelength pk dc drive current = 20ma 460 nm chrom x chrom y color rank a chrom x chrom y chrom x chrom y color rank b chrom x chrom y chrom x chorm y color rank c chrom x chrom y other color ranks are available upon request. consult factory. x y x y x y x y x y x y dc drive current = 10ma dc drive current = 20ma dc drive current = 10ma dc drive current = 20ma dc drive current = 10ma dc drive current = 20ma 0.285 0.310 0.285 0.300 0.295 0.315 0.295 0.300 0.315 0.310 0.315 0.305 0.300 0.330 0.300 0.320 0.310 0.335 0.310 0.325 0.330 0.330 0.330 0.325 0.310 0.350 0.310 0.340 0.320 0.355 0.320 0.340 0.340 0.350 0.348 0.345 angle coverage to 50% points 1/2 dc drive current = 20ma to 50ma 120 deg. h luminous flux g f v dc drive current = 20ma dc drive current = 20ma dc drive current = 20ma 0.40 tbd tbd lumens s forward voltage l v f dc drive current = 5ma dc drive current = 10ma dc drive current = 20ma standard v f dc drive current = 5ma dc drive current = 10ma dc drive current = 20ma low v f 3.4 3.5 3.7 2.95 3.0 3.15 3.5 3.7 3.9 3.0 3.125 3.25 v
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 3 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 chrom x chrom y color rank a - diamond color rank b - box color rank c - circle conversion of 1931 x y coordinates to 1960 u v coordinates: u = 4x/(-2x + 12y + 3) , v = 6y/(-2x + 12y +3) conversion of 1960 u v coordinates to 1931 x y coordinates: x = 3u/(2u ? 8v +4), y = 2v/(2u ?8v +4). consult factory for optional intensity and color ranking.
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 4 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review forward voltage (l and s ) 2.75 3 3.25 3.5 3.75 4 0 10 20 30 40 forward voltage (volt) dc drive current (ma) luminous intensity rank "h" 0 10 20 30 40 0 50 100 150 200 250 dc drive current (ma) luminous intensity (mcd) reliability status test conditions duration no. rejects resistance to solder heat t a = 230c +5c, -0c 5 to 6 seconds 0/15 vibration variable frequency 20 g (min); 20hz to 2,000hz each axis; x, y and z 4 min. each axis 0/15 storage bake t a = 100c 1,000 hrs 0/35 temp. cycle t a = +65c to ?55c 225 cycles 0/35 burn-in i d = 20 ma, ta = 25c 2,000 hrs 0/35 hi humid/temp t a = 85c, rh=85%, no bias 500 hrs 0/15 note: accept devices determined by reduc tion no greater than 70% of initial values
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 5 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review adjusting dc drive current to acco mmodate a desired luminous intensity: the equation to determine the dc driv e current required to produce a desired luminous intensity for the intensity rank h is given below. the graphic for the rank h is shown: dc drive current as a function of luminous intensit y 0 75 150 225 300 0 10 20 30 40 50 luminous intensity (mcd) dc drive current (ma) i d = m x i v + b where m = 0.17, b = -2.512, i v is the value of luminous intensity in milli-candela example: determine the dc drive current required to produce a nominal lu minous intensity of 200 mcd. i d = 0.17 x 200 ? 2.512 = 31.5 ma the resulting power dissipation is: ~110mw (read the forward voltage from the ?l? graph of i d vs v f ) the junction temperature rise is less than 20c above ambient (see junction temperature rise graph).
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 6 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review tape and reel (metric) . 3,000 units /reel
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 7 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review bottom view of low profile package mounting footprint, copper(note: silver plating will enhance luminous intensity)
p p r r e e l l i i m m i i n n a a r r y y microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 8 copyright ? 2002 rev 3 2003-05-23 www. microsemi . com UPWLEDLPXXX high brightness white led p roduct p review junction temperature rise 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 dc drive current (ma) junction temperature rise (c)


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