2sj279(l), 2sj279(s) silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 1 2 3 1 2 3 4 4
dpak-1 1. gate
2. drain
3. source
4. drain d g s
2sj279(l), 2sj279(s) 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C60 v gate to source voltage v gss 20 v drain current i d C5 a drain peak current i d(pulse) * 1 C20 a body to drain diode reverse drain current i dr C5 a avalanche current i ap * 3 C5 a avalanche energy e ar * 3 2.1 mj channel dissipation pch* 2 20 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. value at t c = 25c 3. value at tch = 25c, rg 3 50 w
2sj279(l), 2sj279(s) 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C60 v i d = C10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 a, v ds = 0 gate to source leak current i gss 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss C100 a v ds = C50 v, v gs = 0 gate to source cutoff voltage v gs(off) C1.0 C2.25 v i d = C1 ma, v ds = C10 v static drain to source on state resistance r ds(on) 0.18 0.20 w i d = C3 a, v gs = C10 v* 1 0.23 0.27 w i d = C3 a, v gs = C4 v* 1 forward transfer admittance |y fs | 3.0 5 s i d = C3 a, v ds = C10 v* 1 input capacitance ciss 690 pf v ds = C10 v, v gs = 0, f = 1 mhz output capacitance coss 340 pf reverse transfer capacitance crss 110 pf turn-on delay time t d(on) 15nsi d = C3 a, v gs = C10 v, r l = 10 w rise time t r 35ns turn-off delay time t d(off) 125 ns fall time t f 75ns body to drain diode forward voltage v df C1.2v i f = C5 a, v gs = 0 body to drain diode reverse recovery time t rr 140 s i f = C5 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj279(l), 2sj279(s) 4 40
30
20
10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating ?0 ?0 ?0 ? ? ? ?.5 ?.3 ? ? ? ?0 ?0 ?0 ?00 10? 100? 1ms pw = 10ms (1 shot) dc operation (tc = 25?) ta = 25? drain to source voltage v (v) ds drain current i (a) d in this area is operation ds (on) limited by r maximum safe operation area ?0
?
?
?
? 0 ? ? ? ? ?0 ?0v ?v v = ?.5 v gs ?v ?.5v ?v pulse test drain to source voltage v (v) ds drain current i (a) d typical output characteristics
2sj279(l), 2sj279(s) 5 ?
?
?
?
? 0 ? ? ? ? ? gate to source voltage v (v) gs drain current i (a) d pulse test
v = ?0 v ds tc = 75? 25? ?5? typical transfer characteristics ?.0
?.6
?.2
?.8
?.4 0 gate to source voltage v (v) gs ? ? ? ? ?0 pulse test ? a ? a drain to source saturation voltage
v (v) ds(on) d i = ? a drain to source saturation voltage vs.
gate to drain voltage 1 0.5 0.2 0.1 ?.1 ?.2 ?.5 ? ? ? ?0 pulse test v = ? v gs ?0 v drain current i (a) d static drain to source on state
resistance r ds(on) (w) static drain to source on state
resistance vs. drain current
2sj279(l), 2sj279(s) 6 0.5
0.4
0.3
0.2
0.1 0 case temperature tc (?) ?0 0 40 80 120 160 i = ? a d ?, ? a ? a ?, ? a v = ?0 v gs pulse test ? v static drain to source on state
resistance r ( ) ds(on) static drain to source on state
resistance vs. temperature w 20 10 5 2 1 0.5 ?.1 ?.2 ?.5 ? ? ? ?0 pulse test
v = ?0 v ds 25? tc = ?5? 75? drain current i (a) d forward transfer admittance |yfs| (s) forward transfer admittance vs. drain current ?
?
?
?
? 0 source to drain voltage v (v) sd ?.4 ?.8 ?.2 ?.6 ? v = ?0 v gs ? v 0, 5 v reverse drain current i (a) dr pulse test reverse drain current vs. source to drain voltage
2sj279(l), 2sj279(s) 7 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 td (off) td (on) tf tr drain current i (a) d switching time t (ns) gs dd v = ?0 v , v ?0 v
pw = 2? , duty 1 % switching characteristics =
: <
= 500 200 100 50 20 10 5 ?.1 ?.2 ?.5 ? ? ? ?0 reverse drain current i (a) dr reverse recovery time t (ns) di/dt = 50 a/? , v = 0
ta = 25? gs body to drain diode reverse recovery time rr 10000 3000 1000 300 100 30 10 0 ?0 ?0 ?0 ?0 ?0 ciss coss crss v = 0
f = 1 mhz gs drain to source voltage v (v) ds capacitance c (pf) typical capacitance vs. drain to source voltage
2sj279(l), 2sj279(s) 8 0
?0
?0
?0
?0
?00 0 0
?
?
?2
?6
?0 8 16 243240 i = ? a d v = ?0 v
?5 v
?0 v dd v = ?0 v
?5 v
?0 v dd v gs gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics 2.5
2.0
1.5
1.0
0.5 0 channel temperature tch (?) 25 50 75 100 125 150 repetive avalanche energy e (mj) ar i = ? a
v = ?5 v
duty < 0.1 %
rg 50 ap dd w maximum avalanche energy vs.
channel temperature derationg >
= d. u. t rg i
monitor ap v
monitor ds v dd 50 w vin
?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform
2sj279(l), 2sj279(s) 9 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 6.25 ?/w, tc = 25 ? q g q
q d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impendance vs. pulse width vin monitor d.u.t. vin ?0 v r l v = 30 v dd vout monitor 50 w t t (on) vin 90% 90% 10% 10% vout t (off) 90% t f 10% switching time test circuit waveform d r d
2sj279(l), 2sj279(s) 10 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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