st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com description st3401 is the p-channel logic enhancement mo de power field effect transistor which is produced using high cell density dmos tr ench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other batte ry powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin configuration sot-23-3l feature z - 30v/-4.0a, r ds(on) = 45m (typ.) stp3401 2005. v1 3 1 @v gs = -10v z -30v/-3.2a, r ds(on) = 50m @v gs = -4.5v 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code ordering information part number package part marking ST3401S23RG sot-23-3l a1ya process code : a ~ z ; a ~ z ST3401S23RG s23 : sot-23-3l ; r : tape reel ; g : pb ? free z -30v/-1.2a, r ds(on) = 60m @v gs = -2.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23-3l package design d g s 2 3 1 a1ya 2
st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stp3401 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -30 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d -4.0 -3.2 a pulsed drain current i dm -15 a continuous source current (diode conduction) i s -1.0 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 120 /w
st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stp3401 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.4 -1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v -10 a drain-source on-resistance r ds(on) v gs =-10v,i d =-4.0a v gs =-4.5v,i d =-3.2a v gs =-2.5v,i d =-1.2a 45 50 60 m forward transconductance g fs v ds =-5v,i d =-4.0v 10 s diode forward voltage v sd i s =-1.0a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 14 21 gate-source charge q gs 1.9 gate-drain charge q gd v ds =-15v v gs =-10v i d ? -4.0a 3.7 nc input capacitance c iss 540 output capacitance c oss 131 reverse transfer capacitance c rss v ds =-15v v gs =0v f=1mh z 105 pf 10 15 turn-on time t d(on) tr 15 25 31 50 turn-off time t d(off) tf v ds =-15v v gs =-15v i d =-1a r l =6 r g =-10 20 30 ns
st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com typical characterictics (25 unless noted) stp3401 2005. v1
st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com typical characterictics (25 unless noted) stp3401 2005. v1
st3401 p channel enhancement mode mosfet -4.0a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com sot-23-3l package outline stp3401 2005. v1
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