? semiconductor components industries, llc, 2006 march, 2006 ? rev. 2 1 publication order number: NTZS3151P/d NTZS3151P small signal mosfet ? 20 v, ? 950 ma, p ? channel sot ? 563 features ? low r ds(on) improving system efficiency ? low threshold voltage ? small footprint 1.6 x 1.6 mm ? these are pb ? free devices applications ? load/power switches ? battery management ? cell phones, digital cameras, pdas, pagers, etc. maximum ratings (t j = 25 c unless otherwise noted.) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ? 860 ma t a = 70 c ? 690 power dissipation (note 1) steady state p d 170 mw continuous drain current (note 1) t 5 s t a = 25 c i d ? 950 ma t a = 70 c ? 760 power dissipation (note 1) t 5 s p d 210 mw pulsed drain current t p = 10 s i dm ? 4.0 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 360 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 720 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 600 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 in. sq. pad size (cu. area = 1.127 in. sq. [1 oz.] including traces). sot ? 563 ? 6 case 463a marking diagram http://onsemi.com v (br)dss r ds(on) typ i d max ? 20 v 120 m @ ? 4.5 v 144 m @ ? 2.5 v ? 950 ma 195 m @ ? 1.8 v 1 6 tx = specific device code m = date code = pb ? free package tx m top view d d s d d 6 5 4 1 2 3 g pinout: sot ? 563 d s g p ? channel mosfet see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information (note: microdot may be in either location)
NTZS3151P http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted.) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j ? 13 mv/ c zero gate voltage drain current i dss v gs = 0 v t j = 25 c ? 1.0 a v ds = ? 20 v t j = 125 c ? 5.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.45 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j 2.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 950 ma 120 150 m v gs = ? 4.5 v, i d = ? 770 ma 112 142 v gs = ? 2.5 v, i d = ? 670 ma 144 200 v gs = ? 1.8 v, i d = ? 200 ma 195 240 forward transconductance g fs v ds = ? 10 v, i d = ? 810 ma 3.1 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 16 v 458 pf output capacitance c oss 61 reverse transfer capacitance c rss 38 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v; i d = ? 770 ma 5.6 nc threshold gate charge q g(th) 0.6 gate ? to ? source charge q gs 0.9 gate ? to ? drain charge q gd 1.2 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 950 ma, r g = 6.0 5.0 ns rise time t r 12 turn ? off delay time t d(off) 23.7 fall time t f 18 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 360 ma t j = 25 c ? 0.64 ? 0.9 v t j = 125 c ? 0.5 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = ? 360 ma 10.5 ns 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTZS3151P http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) ? 1 v 125 c 0 4 2.5 2.5 3 1.5 1 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 1.5 0.5 0 0.5 figure 1. on ? region characteristics 0.5 4 2 1.5 3 3.5 1.5 0.5 1 0 0 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 0.1 3 0.2 0 figure 3. on ? resistance vs. drain current and temperature ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) 0 0.1 figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 2 0 t j = ? 55 c 0.3 0 75 150 t j = 25 c i d = ? 0.95 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 2 25 c r ds(on), drain ? to ? source resistance ( ) 1.8 v gs = ? 1.8 v ? 1.2 v 14 ? 1.4 v ? 1.6 v 0.2 v gs = ? 2.5 v 3.5 5 v ds ? 10 v 0.3 0.5 1 1.5 v gs = ? 3 v v gs = ? 2 v figure 6. drain ? to ? source leakage current vs. voltage 020 15 ? v ds , drain ? to ? source voltage (volts) v gs = 0 v ? i dss , leakage (na) t j = 150 c t j = 125 c 100 1000 10000 510 2 2.5 3 3.5 4 3.5 4 4.5 2.5 v gs = ? 4.5 v t j = 25 c t j = 125 c t j = ? 55 c v gs = ? 4.5 v 1.6 3 2 1 ? 1.8 v 2.5 3 2 1
NTZS3151P http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) ? v gs 06 3 4 1 0 q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) i d = ? 0.77 a t j = 25 c 5 2 3 ? v ds, drain ? to ? source voltage ( volts ) 30 10 0 q gd 10 1 10 1 100 r g , gate resistance ( ) t, time (ns) v dd = ? 25 v i d = ? 0.95 a v gs = ? 4.5 v 1000 5 20 t d(off) t d(on) t f t r ? v ds 4 1 0.9 0.2 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v t j = 25 c 1.2 0.7 0.5 0.1 0.4 figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 2 qt 0.8 0.6 0.4 15 5 25 q gs v ds = 0 v v gs = 0 v 5 10 10 1000 300 200 100 0 25 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 500 50 400 ? v gs ? v ds 15 600 700 800 900 20 100 0.3 0.2 0.6 0.8 1.0 ordering information device package shipping NTZS3151Pt1g sot ? 563 (pb ? free) 4000 / tape & reel NTZS3151Pt5g sot ? 563 (pb ? free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
NTZS3151P http://onsemi.com 5 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot ? 563, 6 lead case 463a ? 01 issue f e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTZS3151P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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