we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications.all operating parameters must be validated for each customer application by the c ustomer. smd-led 16.11.2007 rev. 05 radiation infrared absolute maximum ratings at t amb = 25c, unless otherwise specified symbol value unit i f 50 ma i fm 100 ma i sfm 1000 ma p 125 mw t amb -40 to +85 c t stg -40 to +90 c electrical and optical characteristics at t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f =50 ma v f 2.0 2.5 v reverse voltage i f = 100 a v r 5 v radiant power if = 50 ma e 5.0 6.5 mw peak wavelength if = 50 ma p 730 740 750 nm spectral bandwidth at 50% if = 50 ma ? 0.5 30 nm viewing angle if = 50 ma ? 120 deg. switching time if = 50 ma t r , t f 30 ns note: all measurements carried out with epigap equipment parameter surge forward current storage temperature range power dissipation operating temperature range dc forward current peak forward current ELS-740-994 smd algaas/algaas topled type technology case high-power, high speed led in topled ? plcc-2 package, compact design allows for easy circuit board mounting and assembling of arrays optical communications, remote control, light barriers, measurement applications and security systems, automation description t p 10 s test onditions applications t p 50 s, t p /t 0.5 2,2 0,1 2,8 0,2 ? 2,4 0,2 3,1 0,2 1,9 0,2 3,5 0,2 0,8 0,15 0,5 0,2 1 2 2 cathode anode anode elc-67 epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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