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? by semikron b 6 C 88 0898 skm 75 gb 123 d ... t j = 125 c v ce = 600 v v ge = + 15 v r g = 22 w 1 pulse t c = 25 c t j < 150 c not for linear use t j < 150 c v ge = + 15 v t sc < 10 m s l < 25 nh i cn = 50 a t j = 125 c v ce = 600 v v ge = + 15 v i c = 50 a t j < 150 c v ge = 15 v r goff = 22 w i c = 50 a fig. 1 rated power dissipation p tot = f (t c ) fig. 2 turn-on /-off energy = f (i c ) fig. 3 turn-on /-off energy = f (r g ) fig. 4 maximum safe operating area (soa) i c = f (v ce ) fig. 5 turn-off safe operating area (rbsoa) fig. 6 safe operating area at short circuit i c = f (v ce )          0  p s pv xv w s xv , & >$@ lxysr 9 &( >9@ 0 0,5 1 1,5 2 2,5 0 500 1000 1500 i cpuls /i c 502rso.vpo v ce [v] 0 2 4 6 8 10 12 0 500 1000 1500 note: *allowed numbers of short circuit:<1000 *time between short circuit:>1s i csc /i cn 502soas.vpo v ce [v]
? by semikron b 6 C 89 0898 t j = 150 c v ge > 15 v p cond(t) = v cesat(t) . i c(t) v cesat(t) = v ce(to)(tj) + r ce(tj) . i c(t) v ce(to)(tj) 1,5 + 0,002 (t j - 25) [v] typ.: r ce(tj) = 0,020 + 0,00008 (t j - 25) [ w ] max.: r ce(tj) = 0,030 + 0,00010 (t j - 25) [ w ] valid for v ge = + 15 + 2 - 1 [v]; i c 3 0,3 i cnom fig. 11 saturation characteristic (igbt) calculation elements and equations fig. 12 typ. transfer characteristic, t p = 80 m s; v ce = 20 v fig. 7 short circuit current vs. turn-on gate voltage fig. 8 rated current vs. temperature i c = f (t c ) fig. 9 typ. output characteristic, t p = 80 m s; 25 c fig. 10 typ. output characteristic, t p = 80 m s; 125 c 0 20 40 60 80 100 012345 17v 13v 15v 11v 9v 7v i c [a] v ce [v] 502us3.vpo 0 20 40 60 80 100 012345 9v 7v 13v 15v 17v 11v i c [a] 502us7.vpo v ce [v]             , & >$@ jiysr 9 *( >9@
? by semikron b 6 C 90 skm 75 gb 123 d ... 0898 v ge = 0 v f = 1 mhz t j = 125 c v ce = 600 v v ge = + 15 v i c = 50 a induct. load i cpuls = 50 a t j = 125 c v ce = 600 v v ge = + 15 v r gon = 22 w r goff = 22 w induct. load fig. 15 typ. switching times vs. i c fig. 16 typ. switching times vs. gate resistor r g fig. 17 typ. cal diode forward characteristic fig. 18 diode turn-off energy dissipation per pulse fig. 13 typ. gate charge characteristic fig. 14 typ. capacitances vs.v ce 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 600v 800v v ge [v] 502qg3.vpo q g [nc] 0 , 1 1 10 100 0 10203040 ciss coss crss c [nf] 502c.vpo v ce [v]            wi wgrii wgrq wu w>qv@ wujysr 5 * > : : @ 0*%;/6        , ) $ ( rii' p- 5 *  w  w  w 60 w  w 9 &&  9 7 m ?& 9 *( ?9
? by semikron b 6 C 91 0796
 
  

   
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