2sK3407 2002-08-12 1 toshiba field effect transistor silicon n channel mos type ( -mos v ) 2sK3407 switching regulator applications low drain-source on resistance: r ds (on) = 0.48 ? (typ.) high forward transfer admittance: |y fs | = 7.5 s (typ.) low leakage current: i dss = 1 00 a (max) (v ds = 450 v) enhancement-mode: v th = 2.4~3.4 v (v ds = 1 0 v, i d = 1 ma) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v dss 450 v drain-gate voltage (r gs 20 k ) v dgr 450 v gate-source voltage v gss 30 v dc (note 1) i d 10 drain current pulse (note 1) i dp 40 a drain power dissipation (tc 25c) p d 40 w single pulse avalanche energy (note 2) e as 222 mj avalanche current i ar 10 a repetitive avalanche energy (note 3) e ar 4 mj channel temperature t ch 150 c storage temperature range t stg 55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.125 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on condition that the channel temperature is below 150c. note 2: v dd 90 v, t ch 25c (initial), l 3.7 mh, r g 25 , i ar 10 a note 3: repetitive rating; pulse width limited by maximum channel temperature. this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.)
2sK3407 2002-08-12 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 25 v, v ds 0 v 10 a gate-source breakdown voltage v (br) gss i g 10 a, v ds 0 v 30 v drain cut-off current i dss v ds 450 v, v gs 0 v 100 a drain-source breakdown voltage v (br) dss i d 10 ma, v gs 0 v 450 v gate threshold voltage v th v ds 10 v, i d 1 ma 2.4 3.4 v drain-source on resistance r ds (on) v gs 10 v, i d 5 a 0.48 0.65 forward transfer admittance y fs v ds 10 v, i d 5 a 3.5 7.5 s input capacitance c iss 1400 reverse transfer capacitance c rss 240 output capacitance c oss v ds 10 v, v gs 0 v, f 1 mhz 590 pf rise time t r 35 turn-on time t on 50 fall time t f 80 switching time turn-off time t off 260 ns total gate charge (gate-source plus gate-drain) q g 35 gate-source charge q gs 19 gate-drain ?miller? charge q gd v dd 360 v, v gs 10 v, i d 10 a 16 nc source-drain ratings and characteristics (ta 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr 10 a pulse drain reverse current (note 1) i drp 40 a forward voltage (diode) v dsf i dr 10 a, v gs 0 v 1.7 v reverse recovery time t rr 280 ns reverse recovery charge q rr i dr 10 a, v gs 0 v, di dr /dt 100 a/ s 2.7 c marking type K3407 lot number month (starting from alphabet a) year (last number of the christian era) duty
1%, t w 10 s 0 v 10 v v gs r l 40 v dd 200 v i d 5 a v out 50
2sK3407 2002-08-12 3 i d ? v ds i d ? v ds i d ? v gs v ds ? v gs r ds (on) ? i d y fs ? i d 1 10 100 5 1 0.1 common source tc 25c pulse test v gs 10, 15 v 0 2 4 8 10 0 i d 10 a 4 8 12 20 2.5 5 common source tc 25c pulse test 16 6 forward transfer admittance y fs (s) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) 8 0 0 2 4 6 10 2 4 8 6 10 v gs 4.5 v 6 10 15 common source tc 25c pulse test 5.25 5 5.5 5.75 0 20 4 8 12 16 0 8 6 2 4 10 common source v ds 20 v pulse test tc 55c 25 100 0.1 1 10 100 30 10 1 common source v ds 20 v pulse test 25 100 tc 55c 0.3 3 0.1 0.3 3 30 20 16 12 8 4 0 0 10 20 30 40 50 v gs 4.5 v common source tc 25c pulse test 5.5 6 15 10 6.5 6.75 6.25
2sK3407 2002-08-12 4 r ds (on) ? tc i dr ? v ds v th ? tc p d ? tc 0 10 30 20 50 40 200 0 40 80 120 160 drain power dissipation p d (w) case temperature tc (c) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) case temperature tc (c) gate-source voltage v gs (v) total gate charge q g (nc) drain-source voltage v ds (v) dynamic input/output characteristics gate threshold voltage v th (v) 2.0 1.2 0 80 40 0 40 80 160 120 0.4 0.8 i d 10 a 2. 5 5 1.6 common source v gs 10 v pulse test 160 0 1 3 2 6 5 4 80 40 0 40 80 120 common source v ds 10 v i d 1 ma pulse test 500 400 0 100 200 300 0 10 20 30 50 40 common source i d 10 a tc 25c pulse test v ds 360 180 v gs v dd 90 v 0 4 8 12 20 16 0 0.01 0.4 0.1 1 10 100 0.6 0.8 1.2 0.2 1 10 1 3 v gs 0, 1 v common source tc 25c pulse test 5 3 0.1 10 100 1000 3000 1 10 100 300 common source v gs 0 v f 1 mhz tc 25c c iss c oss c rss 30 3 0.3 30 300
2sK3407 2002-08-12 5 drain current i d (a) channel temperature (initial) t ch (c) avalanche energy e as (mj) pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) drain-source voltage v ds (v) safe operating area r th ? t w 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g 25 v dd 90 v, l 3.7 mh v dd b vdss b vdss 2 i l 2 1 as e as ? t ch 0.01 10 0.1 1 10 100 1 m 10 m 100 m 1 10 t p dm t duty t/t r th (ch-c) 3.125c/w duty 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.001 0.003 0.005 0.03 0.05 0.3 0.5 3 5 100 200 300 50 100 0 400 25 75 150 125 0.01 1 0.1 1 10 100 10 100 1000 * single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. i d max (pulse) * i d max ( continuous ) dc operation tc 25c 100 s * 1 ms * v dss max
2sK3407 2002-08-12 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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