View 2SB616_1133132.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon pnp power transistors 2SB616 d escription with to-3pn package complement to type 2sd586 applications for power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB616 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -1.5 v v be base-emitter on voltage i c =-1a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 50 f t transition frequency i c =-1a ; v ce =-5v 11 mhz c ob collector output capacitance i e =0;f=1mhz;v cb =-10v 140 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2SB616 package outline fig.2 outline dimensions

▲Up To Search▲

Price & Availability of 2SB616

	To Download 2SB616 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .