? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 360 a i lrms lead current limit, rms 200 a i dm t c = 25 c, pulse width limited by t jm 900 a i a t c = 25 c 100 a e as t c = 25 c3j p d t c = 25 c 830 w dv/dt i s i dm , v dd v dss , t j 175c 20 v/ns t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ . max. bv dss v gs = 0v, i d = 1ma 100 v v gs(th) v ds = v gs , i d = 3ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 2.5 ma r ds(on) v gs = 10v, i d = 100a, note 1 2.6 m n-channel enhancement mode avalanche rated fast intrinsic rectifier IXFN360N10T v dss = 100v i d25 = 360a r ds(on) 2.6m t rr 130ns either source terminal s can be used as the source terminal or the kelvin source ( gate return ) terminal. ds100088a(10/09) minibloc, sot-227 e153432 g d s s g = gate d = drain s = source features z international standard package z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications gigamos tm trench hiperfet tm power mosfet
ixys reserves the right to change limits, test conditions, and dimensions. IXFN360N10T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. sot-227b (ixfn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 110 180 s c iss 33 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 3160 pf c rss 400 pf r gi gate input resistance 1.20 t d(on) 47 ns t r 100 ns t d(off) 80 ns t f 160 ns q g(on) 525 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 145 nc q gd 165 nc r thjc 0.18 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 360 a i sm repetitive, pulse width limited by t jm 1440 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 130 ns i rm 6.60 a q rm 0.33 c i f = 100a, v gs = 0v -di/dt = 100a/ s v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external)
? 2009 ixys corporation, all rights reserved IXFN360N10T fig. 1. output characteristics @ t j = 25oc 0 60 120 180 240 300 360 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 4v 6v 5v 5.5v fig. 3. output characteristics @ t j = 150oc 0 60 120 180 240 300 360 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v 4 v fig. 4. r ds(on) normalized to i d = 180a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 360a i d = 180a fig. 5. normalized r ds(on) vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 40 80 120 160 200 240 280 320 360 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts i d - amperes v gs = 15v 10v 8v 5v 5.5v 6v 7v 4v fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFN360N10T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc - 40oc 25oc fig. 8. transconductance 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.20.30.40.50.60.70.80.91.01.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 550 q g - nanocoulombs v gs - volts v ds = 50v i d = 180a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes 25s 100s 1ms 10ms r ds ( on ) limit t j = 175oc t c = 25oc single pulse 100ms external lead limit dc
? 2009 ixys corporation, all rights reserved IXFN360N10T fig. 14. resistive turn-on rise time vs. drain current 40 80 120 160 200 240 280 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 12345678910 r g - ohms t r - nanoseconds 0 30 60 90 120 150 180 210 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 60 70 80 90 100 110 120 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 0 50 100 150 200 250 300 350 400 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 70 80 90 100 110 120 130 140 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 40 80 120 160 200 240 280 320 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 50v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 100 200 300 400 500 600 700 12345678910 r g - ohms t f - nanoseconds 50 150 250 350 450 550 650 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 200a i d = 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXFN360N10T ixys ref: f_360n10t(8v)9-23-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance .sadgsfgsf 0.300
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