jun-11-2003 1 BFS386L6 p-tslp-6-1 1 2 3 4 5 6 npn silicon rf transistor preliminary data low voltage/ low current operation for low noise amplifiers for oscillators up to 3.5 ghz and pout > 10 dbm low noise figure: tr1: 1.0db at 1.8 ghz tr2: 1.1 db at 1.8 ghz built in 2 transistors (tr1: die as bfr360l3, tr2: die as bfr380l3) esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFS386L6 fd 1=c1 2=e1 3=c2 4=b2 5=e2 6=b1 tslp-6-1 maximum ratings parameter symbol value unit collector-emitter voltage tr1 tr2 v ceo 6 6 v collector-emitter voltage tr1 tr2 v ces 15 15 collector-base voltage tr1 tr2 v cbo 15 15 emitter-base voltage tr1 tr2 v ebo 2 2 collector current tr1 tr2 i c 35 80 ma
jun-11-2003 2 BFS386L6 maximum ratings parameter symbol value unit base current tr1 tr2 i b 4 14 ma total power dissipation 1) t s 101c, tr1 t s 96c, tr2 p tot 210 380 mw junction temperature tr1 tr2 t j 150 150 c ambient temperature tr1 tr2 t a -65 ... 150 -65 ... 150 storage temperature tr1 tr2 t stg -65 ... 150 -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) tr1 tr2 r thjs 230 140 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
jun-11-2003 3 BFS386L6 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage tr1, i c = 1 ma, i b = 0 tr2, i c = 1ma, i b = 0 v (br)ceo 6 6 9 9 - - v collector-emitter cutoff current tr1, v ce = 15 v , v be = 0 tr2, v ce = 15 v , v be = 0 i ces - - - - 10 10 a collector-base cutoff current tr1, v cb = 5 v, i e = 0 tr2, v cb = 5 v, i e = 0 i cbo - - - - 100 100 na emitter-base cutoff current tr1, v eb = 1 v, i c = 0 tr2, v eb = 1 v, i c = 0 i ebo - - - - 1 1 a dc current gain- tr1, i c = 15 ma, v ce = 3 v tr2, i c = 40 ma, v ce = 3 v h fe 60 60 130 130 200 200 - electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency tr1, i c = 15 ma, v ce = 3 v, f = 1 ghz tr2, i c = 40 ma, v ce = 3 v, f = 1 ghz f t - - 14 14 - - ghz collector-base capacitance tr1, v cb = 5 v, f = 1 mhz, emitter grounded tr2, v cb = 5 v, f = 1 mhz, emitter grounded c cb - - 0.3 0.5 - - pf collector emitter capacitance tr1, v ce = 5 v, f = 1 mhz, base grounded tr2, v ce = 5 v, f = 1 mhz, base grounded c ce - - 0.15 0.2 - - emitter-base capacitance tr1, v eb = 0,5 v, f = 1 mhz, collector grounded tr2, v eb = 0,5 v, f = 1 mhz, collector grounded c eb - - 0.43 1.1 - -
jun-11-2003 4 BFS386L6 electrical characteristics at ta = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) noise figure tr1, i c = 3 ma, v ce = 3 v, z s = z sopt , f = 1.8 ghz tr1, i c = 3 ma, v ce = 3 v, z s = z sopt , f = 3 ghz tr2, i c = 8 ma , v ce = 3 v, z s = z sopt , f = 1.8 ghz tr2, i c = 8 ma , v ce = 3 v, z s = z sopt , f = 3 ghz f - - - - 1 1.6 1.3 1.9 - - - - db power gain, maximum available 1) tr1, i c = 15 ma, v ce = 3 v, f = 1.8 ghz tr1, i c = 15 ma, v ce = 3 v, f = 3 ghz tr2, i c = 40 ma, v ce = 3 v, f = 1.8 ghz tr2, i c = 40 ma, v ce = 3 v, f = 3 ghz g ma - - - - 14.5 10 12 8 - - - - transducer gain tr1, i c = 15 ma, v ce = 3 v, f = 1.8 ghz tr1, i c = 15 ma, v ce = 3 v, f = 3 ghz tr2, i c = 15 ma, v ce = 3 v, f = 1.8 ghz tr2, i c = 15 ma, v ce = 3 v, f = 3 ghz | s 21e | 2 - - - - 12 8 10 6 - - - - third order intercept point at output 2) tr1, v ce = 3 v, i c = 15 ma, f = 1.8 ghz tr2, v ce = 3 v, i c = 40 ma, f = 1.8 ghz ip 3 - - 24 27 - - dbm 1db compression point tr1, i c = 15 ma, v ce = 3 v, f = 1.8 ghz tr2, i c = 40 ma, v ce = 3 v, f = 1.8 ghz p -1db - - 9 11.5 - - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 mhz to 6 ghz
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