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ipb051ne8n g ipi05cne8n g ipp054ne8n g opti mos ? 2 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 100 a t c =100 c 100 pulsed drain current 3) i d,pulse t c =25 c 400 avalanche energy, single pulse e as i d =100 a, r gs =25 ? 826 mj reverse diode d v /d t d v /d t i d =100 a, v ds =68 v, d i /d t =100 a/s, t j,max =175 c 6 kv/s gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 300 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value v ds 85 v r ds(on),max (to 263) 5.1 m ? i d 100 a product summary type ipb051ne8n g ipi05cne8n g ipp054ne8n g package pg-to263-3 pg-to262-3 pg-to220-3 marking 051ne8n 05cne8n 054ne8n rev. 1.04 page 1 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w thermal resistance, r thja minimal footprint - - 62 junction - ambient 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 85 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 234 zero gate voltage drain current i dss v ds =68 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =68 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =100 a, to220, to262 - 4.1 5.4 m ? v gs =10 v, i d =100 a, to263 - 3.8 5.1 gate resistance r g - 1.8 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =100 a 81 162 - s 1) j-std20 and jesd22 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 4) t jmax =150 c and duty cycle d=0.01 for v gs <-5v 2) current is limited by bondwire; with an r thjc =0.5 k/w the chip is able to carry 161 a. 3) see figure 3 rev. 1.04 page 2 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 9090 12100 pf output capacitance c oss - 1710 2270 reverse transfer capacitance c rss - 120 180 turn-on delay time t d(on) -2842ns rise time t r -4261 turn-off delay time t d(off) -6496 fall time t f -2131 gate char g e characteristics 6) gate to source charge q gs -4762nc gate to drain charge q gd -3146 switching charge q sw -5072 gate charge total q g - 135 180 gate plateau voltage v plateau - 5.1 - v output charge q oss v dd =40 v, v gs =0 v - 130 173 nc reverse diode diode continous forward current i s - - 100 a diode pulse current i s,pulse - - 400 diode forward voltage v sd v gs =0 v, i f =100 a, t j =25 c - 1.0 1.2 v reverse recovery time t rr - 110 - ns reverse recovery charge q rr - 345 - nc 6) see figure 16 for gate charge parameter definition v r =40 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =40 v, f =1 mhz v dd =40 v, v gs =10 v, i d =50 a, r g =1.6 ? v dd =40 v, i d =100 a, v gs =0 to 10 v rev. 1.04 page 3 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 50 100 150 200 250 300 350 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 120 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] rev. 1.04 page 4 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 5.5 v 6 v 10 v 0 3 6 9 12 15 0 50 100 150 i d [a] r ds(on) [m ? ] 25 c 175 c 0 50 100 150 200 250 300 02468 v gs [v] i d [a] 0 40 80 120 160 200 0 50 100 150 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 80 160 240 320 400 012345 v ds [v] i d [a] rev. 1.04 page 5 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =100 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 12 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 250 a 2500 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 20406080 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.04 page 6 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =100 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 v 40 v 60 v 0 2 4 6 8 10 12 0 50 100 150 q gate [nc] v gs [v] 75 80 85 90 95 100 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 t av [s] i as [a] rev. 1.04 page 7 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g pg-to220-3: outline rev. 1.04 page 8 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g rev. 1.04 page 9 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g rev. 1.04 page 10 2006-02-17
ipb051ne8n g ipi05cne8n g ipp054ne8n g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 1.04 page 11 2006-02-17

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