BYV29FX-600 enhanced ultrafast rectifier diode rev. 01 ? 30 june 2009 product data sheet 1. product profile 1.1 general description enhanced ultrafast epitaxial rectifier diode in a sod113 (2-lead to-220f) plastic package. 1.2 features and benefits ? high thermal cycling performance ? isolated package ? low on-state losses ? low thermal resistance ? soft recovery characteristic 1.3 applications ? dual mode (dcm and ccm) pfc ? power factor correction (pfc) for interleaved topology 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v rrm repetitive peak reverse voltage - - 600 v i f(av) average forward current square-wave pulse; = 0.5; t h =72c; see figure 1 ; see figure 2 --9a dynamic characteristics t rr reverse recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j = 25 c; see figure 5 - 17.5 35 ns static characteristics v f forward voltage i f =9a; t j =150c; see figure 4 -1.31.9v
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 2 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 2. pinning information 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1 k cathode s o d 11 3 (to-220f) 2 a anode mb n.c. mounting base; isolated 2 1 mb a 001aaa020 k table 3. ordering information type number package name description version BYV29FX-600 to-220f plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead to-220 "full pack" sod113 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v rrm repetitive peak reverse voltage -600v v rwm crest working reverse voltage -600v v r reverse voltage dc - 600 v i f(av) average forward current square-wave pulse; = 0.5; t h = 72 c; see figure 1 ; see figure 2 -9a i frm repetitive peak forward current square-wave pulse; = 0.5; t p = 25 s; t h =72c - 18 a i fsm non-repetitive peak forward current t p = 10 ms; sine-wave pulse; t j(init) =25c - 91 a t p = 8.3 ms; sine-wave pulse; t j(init) =25c - 100 a
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 3 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode fig 1. forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values fig 2. forward power dissipation as a function of average forward current; square waveform; maximum values 003aad324 0 4 8 12 16 0369 i f(av ) (a) p tot (w) a = 1.57 1.9 2.2 2.8 4.0 003aad325 0 4 8 12 16 20 24 0 5 10 15 i f(av) (a) p tot (w) = 1 0.5 0.2 0.1
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 4 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 5. thermal characteristics 6. isolation characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-h) thermal resistance from junction to heatsink with heatsink compound; see figure 3 --5.5k/w r th(j-a) thermal resistance from junction to ambient free air -55-k/w fig 3. transient thermal impedance from junction to heatsink as a function of pulse width 001aaf257 10 ? 2 10 ? 1 1 10 z th(j-h) (k/w) 10 ? 3 t p (s) 10 ? 6 10 1 10 ? 1 10 ? 5 10 ? 3 10 ? 2 10 ? 4 t p t p t p t t = table 6. isolation characteristics symbol parameter conditions min typ max unit v isol(rms) rms isolation voltage f = 1 mhz; rh = 65 %; between all pins and external heatsink --2500v c isol isolation capacitance from cathode to external heatsink; f = 1 mhz - 10 - pf
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 5 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v f forward voltage i f =9a; t j = 25 c; see figure 4 -1.42.1v i f =9a; t j = 150 c; see figure 4 -1.31.9v i r reverse current v r =600v; t j = 150 c - - 1.5 ma v r =600v; t j =25c --50a dynamic characteristics q r recovered charge i f =1a; v r =30v; di f /dt = 100 a/s; see figure 5 -13-nc t rr reverse recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j =25c; see figure 5 - 17.5 35 ns i rm peak reverse recovery current i f =1a; v r =30v; di f /dt = 100 a/s; see figure 5 -1.5-a v fr forward recovery voltage i f =1a; di f /dt = 100 a/s; see figure 6 -3.2-v fig 4. forward current as a function of forward voltage fig 5. reverse recovery definitions; ramp recovery 003aad323 0 4 8 12 16 20 0123 v f (v) i f (a) (1) (2) (3) 003aac562 t rr time 100 % 25 % i f dl f dt i r i rm q r
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 6 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode fig 6. forward recovery definitions 001aab912 time time v frm v f i f v f
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 7 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 8. package outline fig 7. package outline sod113 (to-220f) references outline version european projection issue date iec jedec jeita sod113 2-lead to-220f sod11 3 02-04-09 07-06-18 notes 1. terminals are uncontrolled within zone l 1 . 2. z is depth of t. unit a mm 4.6 4.0 2.9 2.5 0.9 0.7 0.7 0.4 15.8 15.2 10.3 9.7 5.08 2.7 1.7 0.6 0.4 3.3 2.8 2.55 0.4 2.6 a 1 dimensions (mm are the original dimensions) p lastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead to-220 'full pack' 0 10 20 mm scale b b 1 1.1 0.9 c d e e h e max 19.0 l 2 max 0.5 j k l 14.4 13.5 l 1 (1) m 6.5 6.3 p 3.2 3.0 qq 2.6 2.3 t w z (2) 0.8 a a 1 c q k j m z e w m 12 b e p b 1 q d t h e l l 1 (1) l 2
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 8 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 9. revision history table 8. revision history document id release date data sheet status change notice supersedes BYV29FX-600_1 20090630 pr oduct data sheet - -
BYV29FX-600_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 30 june 2009 9 of 10 nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 10.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 10.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 11. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors BYV29FX-600 enhanced ultrafast rectifier diode ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 30 june 2009 document identifier: BYV29FX-600_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 12. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 isolation characteristics . . . . . . . . . . . . . . . . . . .4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 10 legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 10.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 10.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 11 contact information. . . . . . . . . . . . . . . . . . . . . . .9
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