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1/8 december 2002 . STN3NF06L n-channel 60v - 0.07 w - 4a sot-223 stripfet? ii power mosfet n typical r ds (on) = 0.07 w n exceptional dv/dt capability n avalanche rugged technology n 100% avalanche tested n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n dc-dc & dc-ac coverters n dc motor control (disk drivers, etc.) n synchronous rectification type v dss r ds(on) i d STN3NF06L 60 v < 0.1 w 4 a 1 2 2 3 sot-223 internal schematic diagram absolute maximum ratings ( ) pulse width limited by safe operating area. ( ) current limited by the package (1) i sd 3a, di/dt 150a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 4a, v dd = 30v symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 16 v i d ( ) drain current (continuous) at t c = 25c 4a i d drain current (continuous) at t c = 100c 2.9 a i dm ( ) drain current (pulsed) 16 a p tot total dissipation at t c = 25c 3.3 w derating factor 0.026 w/c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 200 mj t stg storage temperature -55 to 150 c t j operating junction temperature
STN3NF06L 2/8 thermal data (*) when mounted on fr-4 board with 1 inch 2 pad, 2 oz of cu and t [ 10 sec (**) when mounted on minimum footprint electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-pcb rthj-pcb t l thermal resistance junction-pcb (*) thermal resistance junction-pcb (**) maximum lead temperature for soldering purpose (for 10 sec. 1.6 mm from case) max max typ 38 100 260 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 2.8 v r ds(on) static drain-source on resistance v gs = 10 v i d = 1.5 a v gs = 5 v i d = 1.5 a 0.07 0.085 0.10 0.12 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 1.5 a 3s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 340 63 30 pf pf pf
3/8 STN3NF06L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 1.5 a r g = 4.7 w v gs = 5 v (resistive load, figure 3) 9 25 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48v i d = 3a v gs = 5v 7 1.5 2.8 9nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 1.5 a r g = 4.7 w, v gs = 5 v (resistive load, figure 3) 20 10 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4 16 a a v sd (*) forward on voltage i sd = 4 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) 50 88 3.5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STN3NF06L 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STN3NF06L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
STN3NF06L 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STN3NF06L dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.630.650.6724.825.626.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data
STN3NF06L 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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Price & Availability of STN3NF06L

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L 72K6052	STMicroelectronics	Mosfet, N-Ch, 60V, 4A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes \|Stmicroelectronics STN3NF06L	250: USD0.565 100: USD0.629 50: USD0.686 25: USD0.743 10: USD0.8 1: USD0.97	79326
STN3NF06L 86AK6508	STMicroelectronics	Mosfet, N-Ch, 60V, 4A, Sot-223 Rohs Compliant: Yes \|Stmicroelectronics STN3NF06L	16000: USD0.386 8000: USD0.403 4000: USD0.412	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L 497-3177-1-ND	STMicroelectronics	MOSFET N-CH 60V 4A SOT223	28000: USD0.33413 12000: USD0.33477 8000: USD0.35097 4000: USD0.36851 2000: USD0.36852 1000: USD0.39146 500: USD0.48056 100: USD0.5669 10: USD0.729 1: USD0.89	78366

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L STN3NF06L	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN3NF06L)	16000: USD0.29979 8000: USD0.30623 4000: USD0.31268	3610
STN3NF06L 72K6052	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 72K6052)	100: USD0.688 50: USD0.79 25: USD0.855 10: USD0.922 1: USD1.12	0
STN3NF06L STN3NF06L	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: STN3NF06L)	16000: USD0.29979 8000: USD0.30623 4000: USD0.31268	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L 511-STN3NF06L	STMicroelectronics	MOSFETs N-Ch 60 Volt 4 AMP	1: USD0.89 10: USD0.729 100: USD0.567 500: USD0.481 1000: USD0.433 4000: USD0.368 8000: USD0.334	68093

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L E54:1762_06546227	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	8000: USD0.2767 4000: USD0.2996	4000
STN3NF06L V72:2272_06564690	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	25: USD0.2866 10: USD0.6996 1: USD0.8547	96

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223	20000: USD0.29 16000: USD0.295 12000: USD0.3 8000: USD0.3 4000: USD0.31	272000
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223	20000: USD0.29 16000: USD0.295 12000: USD0.3 8000: USD0.3 4000: USD0.31	12000
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223	20000: USD0.29 16000: USD0.295 12000: USD0.3 8000: USD0.3 4000: USD0.31	0
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223	20000: USD0.29 16000: USD0.295 12000: USD0.3 8000: USD0.3 4000: USD0.31	0
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223	20000: USD0.29 16000: USD0.295 12000: USD0.3 8000: USD0.3 4000: USD0.31	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L 30644354	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	2000: USD0.24 1000: USD0.2413 500: USD0.2575 200: USD0.3175 100: USD0.3188 90: USD0.3488 30: USD1.0663	7317
STN3NF06L 77372470	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	4000: USD0.3481	4000
STN3NF06L 76062472	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	29: USD0.2866	96

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics			3500

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	MOSFET Transistor, N-Channel, SOT-223	795: USD0.2184 144: USD0.252 1: USD0.84	3115
STN3NF06L	STMicroelectronics	MOSFET Transistor, N-Channel, SOT-223	1046: USD0.87 560: USD0.957 1: USD2.32	2800

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L STN3NF06L	STMicroelectronics	Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223	8000: USD0.286 4000: USD0.309 2000: USD0.334 1000: USD0.361 500: USD0.39 250: USD0.42 100: USD0.465 50: USD0.501 10: USD0.588 1: USD0.688	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	STN3NF06L Series 60 V 0.1 Ohm N-Channel STripFET™ II Power MosFet - SOT-223		11785

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	N-CHANNEL 60 V, 0.07 OHM-4 A-SOT-223 STRIPFET II POWER MOSFET Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		3275

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	INSTOCK		4000
STN3NF06L		INSTOCK		16315
STN3NF06L	Sangdest Microelectronics (Nanjing) Co Ltd	INSTOCK		9074

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L STN3NF06L	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R (Alt: STN3NF06L)		36000

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L C1S730200189110	STMicroelectronics	Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R	2000: USD0.192 1000: USD0.193 500: USD0.206 200: USD0.254 100: USD0.255 50: USD0.279 5: USD0.853	7317

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	MFG UPON REQUEST			1475
STN3NF06L	STMicroelectronics			298192

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	STN3NF06L		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
STN3NF06L	STMicroelectronics	60V, 0.1��, 4A, N-channel Power MOSFET	1: USD0.14 100: USD0.14 500: USD0.14 1000: USD0.14	4000

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