FDC6306P FDC6306P rev. c FDC6306P dual p-channel 2.5v specified powertrench ? mosfet february 1999 ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 8v i d drain current - continuous (note 1a) -1.9 a - pulsed -5 p d power dissipation for single operation (note 1a) 0.96 w (note 1b) 0.9 (note 1c) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 130 c/w r q jc thermal resistance, junction-to-case (note 1) 60 c/w package outlines and ordering information device marking device reel size tape width quantity . 306 FDC6306P 7 8mm 3000 units 5 6 4 2 3 1 general description these p-channel 2.5v specified mosfets are produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. these devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive so-8 and tssop-8 packages are impractical. applications ? load switch ? battery protection ? power management features ? -1.9 a, -20 v. r ds(on) = 0.170 w @ v gs = -4.5 v r ds(on) = 0.250 w @ v gs = -2.5 v ? low gate charge (3 nc typical). ? fast switching speed. ? high performance trench technology for extremely low r ds(on) . ? supersot tm -6 package: small footprint (72% smaller than standard so-8); low profile (1mm thick). d1 s2 g1 d2 s1 g2 supersot -6 tm
FDC6306P FDC6306P rev. c electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions min t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 m a-20 v d bv dss d t j breakdown voltage temperature coefficient i d = -250 m a , referenced to 25 c-18 mv/ c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 m a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 m a -0.4 -0.9 -1.5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = -250 m a , referenced to 25 c3 mv/ c r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -1.9 a v gs = -4.5 v, i d = -1.9 a @125 c v gs = -2.5 v, i d = -1.7 a 0.127 0.182 0.194 0.170 0.270 0.250 w i d(on) on-state drain current v gs = -4.5 v, v ds =- 5 v -5 a g fs forward transconductance v ds = -5 v, i d = -1.9 a 4 s dynamic characteristics c iss input capacitance 441 pf c oss output capacitance 127 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 67 pf switching characteristics (note 2) t d(on) turn-on delay time 6 12 ns t r turn-on rise time 9 18 ns t d(off) turn-off delay time 14 25 ns t f turn-off fall time v dd = -10 v, i d = -1 a, v gs = -4.5 v, r gen = 6 w 39ns q g total gate charge 3 4.2 nc q gs gate-source charge 0.7 nc q gd gate-drain charge v ds = -10 v, i d = -1.9 a, v gs = -4.5 v 0.8 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.8 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.8 a (note 2) -0.8 -1.2 v notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r q jc is guaranteed by design while r q ja is determined by the user's board design.both devices are assumed to be operating and sharing the dissipated heat energy equally. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 m s, duty cycle 2.0% a) 130 c/w when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140 c/w when mounted on a 0.005 in 2 pad of 2 oz. copper. c) 180 c/w when mounted on a 0.0015 in 2 pad of 2 oz. copper.
FDC6306P FDC6306P rev. c typical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 012345 0 2 4 6 8 10 12 -v , drain-source voltag e (v) - i , drain-source current (a) ds d -2 .5 v -4.0v -2 .0 v -3 .5 v -3 .0 v v = -4 .5 v gs 0246810 0.8 1 1.2 1.4 1.6 1.8 2 - i , drain current (a) drain-source o n-resistance v = -2.5 v gs d r , n or mali ze d ds(on) -4.5v -3.5v -4.0v -3.0v -50 -25 0 25 50 75 100 125 150 0. 6 0. 8 1 1. 2 1. 4 1. 6 t , junction temperature (c) drain-source o n-resistance j r , n or ma l ize d ds(on) v = -4.5v gs i = - 1 .9 a d 12345 0 0.1 0.2 0.3 0.4 0.5 - v , ga te to s ource volt ag e (v ) gs r , on- r e sis ta nc e ( oh m) ds(on) i = - 1a d t = 125c j 25 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 - v , bod y d i od e for war d volt age ( v ) -i , reverse drain current (a) 25 c -55 c v = 0v gs sd s t = 125 c j 012345 0 2 4 6 8 10 -v , gate to source voltage (v) - i , drain current (a) v = -5v ds gs d t = -55 c j 125c 25 c
FDC6306P FDC6306P rev. c typical characteristics (continued) figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0.03 0.1 0.3 1 3 10 30 -v , drain-source voltage (v) -i , drain current (a) rds(on) limit d ds v = -4.5v single pulse r = 180c/w t = 25c q ja gs a dc 1s 100ms 10ms 1ms 100us 0.01 0.1 1 10 100 300 0 1 2 3 4 5 single pulse time (sec) power (w) single pulse r =180c/w t = 25c q ja a 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 t - t = p * r (t) q ja a j p(pk) t 1 t 2 r (t) = r(t) * r r = 180 c/w q ja q ja q ja 01234 0 1 2 3 4 5 q , gat e cha rge (nc) -v , gate-source voltage (v) g gs v = -5v ds -15v i = -1.9a d -10v 0.1 0.2 0.5 1 2 5 10 20 30 100 300 1000 -v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v g s c oss c rss
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