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| VISHAY BY268.BY269 Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * Glass passivated junction * Hermetically sealed package Applications High voltage fast rectification diode Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) 949539 Parts Table Part BY268 BY269 Type differentiation VR = 1400 V; IFAV = 0.8 A VR = 1600 V; IFAV = 0.8 A SOD57 SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A see electrical characteristics see electrical characteristics tp = 10 ms, half sinewave Test condition Sub type BY268 BY269 BY268 BY269 Symbol VRSM VRSM VR VR IFSM IFAV Value 1600 1800 1400 1600 20 0.8 Unit V V V V A A C mJ Tj = Tstg - 55 to + 175 ER 10 Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition on PC board with spacing 25 mm L = 10 mm, TL = constant Sub type Symbol RthJA RthJA Value 100 45 Unit K/W K/W Document Number 86005 Rev. 5, 07-Jan-03 www.vishay.com 1 BY268.BY269 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current IF = 0.4 A VR = 1400 V VR = 1600 V VR = 1400 V, Tj = 100 C VR = 1600 V, Tj = 100 C Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BY268 BY269 BY268 BY269 Test condition Sub type Symbol VF IR IR IR IR trr 1 1 Min Typ. VISHAY Max 1.25 2 2 15 15 400 Unit V A A A A ns Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 0.9 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 l - Lead Length ( mm ) l I FAV - Average Forward Current ( A ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 VR=VRRM half sinewave RthJA=100K/W PCB: d=25mm RthJA=45K/W l=10mm 80 100 120 140 160 180 94 9090 16413 Tamb - Ambient Temperature ( C ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 10.000 1000 VR = VRRM I F - Forward Current ( A) 1.000 Tj=175C Tj=25C IR - Reverse Current ( mA ) 100 0.100 10 0.010 0.001 0.0 16412 1 0.5 1.0 1.5 2.0 VF - Forward Voltage ( V ) 2.5 16414 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86005 Rev. 5, 07-Jan-03 VISHAY BY268.BY269 Vishay Semiconductors 900 PR - Reverse Power Dissipation ( mW ) CD - Diode Capacitance ( pF ) 35 VR = VRRM 30 25 20 15 10 5 0 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 16416 800 700 600 500 400 300 200 100 0 PR-Limit @80%VR f=1MHz PR-Limit @100%VR 0.1 16415 1.0 10.0 VR - Reverse Voltage ( V ) 100.0 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86005 Rev. 5, 07-Jan-03 www.vishay.com 3 BY268.BY269 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86005 Rev. 5, 07-Jan-03 |
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