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  Datasheet File OCR Text:
 2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3856 200 180 6 15 4 130(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 180min
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
2SC3856
Unit
A A
19.90.3
4.0
V V pF
50min 2.0max 20typ 300typ MHz
a b
o3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1 IB2 (A) -1 ton (s) 0.5typ tstg (s) 1.8typ tf (s) 0.6typ
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
1A
0m A
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3
I C - VBE Temperature Characteristics (Typical)
15 (V CE= 4V)
15
70
5
m 00
A
300m A
Collector Current I C (A)
Collector Current I C( A)
20 0m A
10
100 mA
2
10
mp)
e Te
Cas
C (
25C
IB=20mA
IC=10A 5A 0 0 0.5 1.0 Base Current I B( A) 1.5 2.0 0 0
0
0
1
2
3
4
-30C
125
(Case
5
50mA
1
5
(Cas
e Te
1 Base-Emittor Voltage V B E( V)
Temp)
mp)
2
Collector-Emitter Voltage V C E( V)
(V C E= 4V) 200 125C DC Curr ent Gain h FE
j - a( C /W)
hFE - IC Characteristics (Typical) (VCE=4V) www..com
300 D C Cur r ent Gai n h F E
hFE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3
100 25C
Transient Thermal Resistance
1 0.5
100
Typ
50
50
-30C
20 0.02
0.1
0.5
1
5
10 15
20 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(VCE=12V) 30 40
Safe Operating Area (Single Pulse)
10
3m
P c - T a Derating
130
0m
Cu t-of f Fr equen cy f T( MH Z)
10 20 Collect or Cur ren t I C( A)
D C
s
Ma xim um Powe r Dissipat io n P C (W)
Typ
10
m
s
s
100
W ith In
5
fin ite he at si nk
1 0.5
50
10
Without Heatsink Natural Cooling
Without Heatsink 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 0.1 3 10 100 200 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
78


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