View PJF12N65_619198.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
* 12A , 650V, RDS(ON)=0.8@VGS=10V, ID=6.0A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3S 2 1D G
3S 12D G
MECHANICAL DATA
* Case: TO-220AB / ITO-220AB Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM 2 Drain
ORDERING INFORMATION
1
TYPE
PJP12N65 PJF12N65
MARKING
P12N65 F12N65
PACKAGE
TO-220AB ITO-220AB
PACKING
50PCS/TUBE 50PCS/TUBE
Gate 3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R J C R J A
P J P 1 2 N6 5
P J F 1 2 N6 5
Uni ts V V
650 +3 0 12 48 175 1 .4 12 48 52 0 .4 2
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 990 0 .7 6 2 .5 2 .4 100
O
C
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12m
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
O
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
PJP12N65 / PJF12N65
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS V GS (th) R D S (o n) I DSS I GS S
V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 6.0A VDS=650V, VGS=0V V GS =+3 0 V, V D S =0 V
650 2 .0 -
0.66 -
4 .0 0.8 10 +1 0 0
V V uA n
Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd t d (o n) tr t d (o ff) tf C C C
i ss
-
4 6 .8 9 .2 14.6 16.2 26.8 56 2 4 .6 1800 145 16
62 24 42 ns 98 38 2450 195 22 pF nC
V D S =5 2 0 V, ID =1 2 A , V GS =1 0 V
-
VDD=325V, I D =12A V GS =1 0 V, RG=25
-
o ss
V D S =2 5 V, V GS =0 V f=1 .0 MH Z
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS I SM V SD t rr Q
rr
IS =1 2 A , V GS =0 V V GS =0 V, IF =1 2 A d i /d t=1 0 0 A /us
-
450 5 .0
12 48 1 .4 -
A A V ns uC
Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
STAD-DEC.25.2009
PAGE . 2
PJP12N65 / PJF12N65
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
ID - Drain-to-Source Current (A)
ID - Drain Source Current (A)
24 20 16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
VGS= 20V~ 6.0V
100
VDS =50V
10
TJ = 125oC
5.0V
25oC -55oC
1
0.1 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 8
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
1.5
RDS(ON) - On Resistance()
3 RDS(ON) - On Resistance() 2.5 2
1.2 0.9 VGS=10V 0.6 VGS = 20V 0.3 0
ID =6.0A
1.5 1
TJ =25oC
0.5 0 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10 12 14 16 18 20
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5
3000
C - Capacitance (pF)
VGS =10 V ID =6.0A
2500
f = 1MHz VGS = 0V Ciss
2000 1500 1000
Coss
500 0
Crss
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ - Junction Temperature (oC)
VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
STAD-DEC.25.2009
Fig.6 Capacitance
PAGE. 3

PJP12N65 / PJF12N65
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC)
100 VDS=520V VDS=325V VDS=130V
IS - Source Current (A)
ID =12A
VGS = 0V
10 TJ = 125oC 1
25oC
-55oC
0.1
0.01
0.2
0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.2
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(Normalized)
ID = 250A
1.1
1
0.9
0.8 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-DEC.25.2009
PAGE. 4
PJP12N65 / PJF12N65
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-DEC.25.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.

▲Up To Search▲

Price & Availability of PJF12N65

	To Download PJF12N65 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .