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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 100N50P VDSS ID25 = 500 V = 70 A RDS(on) 52 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL 1 mA Mounting force t = 1 min t=1s Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C Maximum Ratings 500 500 30 40 70 250 100 100 5 20 625 -55 ... +150 150 -55 ... +150 300 2500 3000 28..150 / 6.4..30 5 V V V V A A A mJ J V/ns W C C C C l ISOPLUS264 G D S ISOLATEDTAB D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l V~ V~ N/lb g l l Advantages l l l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125 C Characteristic Values Min. Typ. Max. 500 3.0 5.0 200 25 2000 52 V V nA A A m Easy to mount Space savings High power density (c) 2006 IXYS All rights reserved DS99563E(01/06) IXFL 100N50P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 50 80 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 140 36 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External) 29 110 26 240 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 96 78 S nF pF pF ns ns ns ns nC nC nC 0.20 C/W 0.13 C/W Note: Bottom heatsink meets 2500Vrms Isolation to the other pins. ISOPLUS264 (IXFL) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = IT, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 100 250 1.5 200 0.6 6.0 A A V ns C A Ref: IXYS CO 0128 R0 1. Pulse test, t 300 s, duty cycle d 2 % Test Current IT = 50 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFL 100N50P Fig. 1. Output Characteristics @ 25C 100 90 80 70 V GS = 10V 8V 220 200 180 160 8V V GS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 I D - Amperes 7V 140 120 100 80 60 40 6V 7V 6V 5V 3.5 4 4.5 5 5.5 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125C 100 90 80 70 V GS = 10V 8V 7V 3.1 2.8 2.5 Fig. 4. R DS(on) Normalized to ID = 50A Value v s. Junction Temperature V GS = 10V R DS(on) - Normalized I D - Amperes 2.2 1.9 1.6 1.3 1 I D = 50A I D = 100A 60 50 6V 40 30 20 5V 10 0 0 1 2 3 4 5 6 7 8 9 10 11 0.7 0.4 -50 -25 0 25 50 75 100 125 150 V DS - Volts T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 50A Value vs. Drain Current 3 2.8 2.6 V GS = 10V TJ = 125C 60 80 70 Fig. 6. Maximum Drain Current v s. Case Temperature R DS(on) - Normalized 2.4 I D - Amperes TJ = 25C 0 20 40 60 80 100 120 140 160 180 200 220 2.2 2 1.8 1.6 1.4 1.2 1 0.8 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T J - Degrees Centigrade (c) 2006 IXYS All rights reserved IXFL 100N50P Fig. 7. Input Admittance 160 140 120 105 150 135 120 Fig. 8. Transconductance g f s - Siemens I D - Amperes 100 80 60 40 TJ = 125C 25C - 40C 90 75 60 45 30 TJ = - 40C 25C 125C 20 0 4 4.5 5 5.5 6 6.5 7 7.5 15 0 0 20 40 60 80 100 120 140 160 180 V GS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 9 250 8 7 V DS = 250V I D = 50A I G = 10mA Fig. 10. Gate Charge I S - Amperes 200 V GS - Volts TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 6 5 4 3 2 1 150 100 50 0 0 0 25 50 75 100 125 150 175 200 225 250 V SD - Volts Q G - NanoCoulombs Fig. 11. Capacitance 100,000 f = 1 MHz 1,000 Fig. 12. Forward-Bias Safe Operating Area Capacitance - PicoFarads C iss 10,000 RDS(on) Limit 25s 100 100s I D - Amperes C oss 1,000 1ms 10 DC 10ms TJ = 150C C rss 100 0 5 10 15 20 25 30 35 40 1 10 TC = 25C 100 1000 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFL 100N50P Fig. 13. Maximum Transient Thermal Resistance 1.000 R(th)JC - C / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved |
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