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NTMFS4837N Power MOSFET
30 V, 74 A, Single N-Channel, SO-8 FL
Features
* * * *
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices
V(BR)DSS 30 V
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* CPU Power Delivery * DC-DC Converters * Low Side Switching www..com
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms TA = 25C TA = 85C TA = 25C TA = 25C Steady State TA = 85C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 16 11.5 2.2 10 7 0.88 74 53 47.2 148 -55 to +150 39 6 242 W A C A V/ns mJ W A W A Unit V V A
Applications
RDS(ON) MAX 5.0 mW @ 10 V 7.5 mW @ 4.5 V
ID MAX 74 A
D (5,6)
G (4)
S (1,2,3) N-CHANNEL MOSFET
MARKING DIAGRAM
D
1
SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y WW G
S S S G
4837N AYWWG G D
D
D
Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IL = 22 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
= Assembly Location = Year = Work Week = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device NTMFS4837NT1G Package SO-8 FL (Pb-Free) SO-8 FL (Pb-Free) Shipping 1500 / Tape & Reel 5000 / Tape & Reel
TL
260
C NTMFS4837NT3G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
July, 2006 - Rev. 1
Publication Order Number: NTMFS4837N/D
NTMFS4837N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA Value 2.65 56.75 142.2 C/W Unit
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient www..com Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 25 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH) VGS(TH)/TJ RDS(on)
VGS = VDS, ID = 250 mA
1.5 5.7
2.5
V mV/C
VGS = 10 V to 11.5 V VGS = 4.5 V
ID = 30 A ID = 15 A ID = 30 A ID = 15 A
3.5 3.5 5.9 5.9 15
5.0 mW
7.5
Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
gFS
VDS = 15 V, ID = 15 A
S
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 15 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V
2048 444 239 14.2 2.98 5.7 6.7 34.2 nC nC 22 pF
td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W
14.2 55 19 10 8.5 25.6 25.2 9.2 ns ns
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4837N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.85 0.72 24 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 13 11 14 nC ns 1.2 V Symbol Test Condition Min Typ Max Unit
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance www..com Gate Resistance
tRR ta tb QRR
LS LD LG RG TA = 25C
0.93 0.005 1.84 2.8
nH
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 100 90 ID, DRAIN CURRENT (A) 80 70 60 50 40 30 20 10 0 0 2 3 4 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 3.2 V 5 3.6 V 3.4 V 3.8 V VGS = 10 V to 4.5 V TJ = 25C ID, DRAIN CURRENT (A) 4V
100 90 80 70 60 50 40 30 20 10 0 1
VDS 10 V
TJ = -55C TJ = 25C TJ = 125C
2
3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V)
8
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.016 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 3.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.01
Figure 2. Transfer Characteristics
T = 25C ID = 30 A
0.009
TJ = 25C VGS = 4.5 V
0.008 0.007
0.006 0.005 VGS = 11.5 V
0.004 0.003
0.002 0.001 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) 80 90
4.0
5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (V)
11 11.5
Figure 3. On-Resistance vs. VGS
Figure 4. On-Resistance vs. Drain Current & Gate Voltage
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NTMFS4837N
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 ID = 30 A VGS = 10 V & 4.5 V 100000 VGS = 0 V 10000 IDSS, LEAKAGE (nA) 1000 100 10 1 TJ = 25C -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ = 125C TJ = 150C
TJ, JUNCTION TEMPERATURE (C) www..com
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
12
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-to-Source Leakage Current vs. Voltage
3000 TJ = 25C C, CAPACITANCE (pF)
QT
10 8 6 Qgd 4 Qgs 2 VDD = 15.0 V VGS = 11.5 V ID = 30 A TJ = 25C 5 10 15 20 25 30 35
CISS 2000
1000 COSS CRSS 0 10 5 0 5 10 15 20 25
0 0 QG, TOTAL GATE CHARGE (nC)
VGS VDS VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source & Drain-to-Source Voltage vs. Total Charge
30 25 20 15 10 5 0 0.50 VGS = 0 V TJ = 25C
1000 VDD = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) 100 td(off) tr 10 tf td(on)
1 1 10 RG, GATE RESISTANCE (W) 100
IS, SOURCE CURRENT (A)
0.60
0.80
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTMFS4837N
EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 1000 VGS = 20 V Single Pulse TC = 25C 250 225 200 175 150 125 100 75 50 25 0 25 ID = 22 A
ID, DRAIN CURRENT (A)
100 10 ms 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 dc 100 ms
10 ms 100 ms 100
1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (C)
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Figure 11. Maximum Rated Forward-Biased Safe Operating Range
100
Figure 12. Maximum Avalanche Energy vs, Starting Junction Temperature
25C
100C 125C ID (A) 10
1
1
10 100 PULSE WIDTH (ms)
1000
Figure 13. EAS vs. Pulse Width
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NTMFS4837N
PACKAGE DIMENSIONS
SO-8 FLAT LEAD (DFN6) CASE 488AA-01 ISSUE B
2X
0.20 C D 2 D1
6 5
A B
2X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
0.20 C
4X
E1 2 www..com
1 2 3 4
E c
q
A1
TOP VIEW
3X
C
SEATING PLANE
0.10 C A 0.10 C SIDE VIEW
8X
e DETAIL A
DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q
MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 0.51 --- --- 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _
DETAIL A
b e/2
1 4
STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN
0.10 0.05
CAB c L
K E2 L1
6 5
M
G
D2 BOTTOM VIEW
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTMFS4837N/D

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