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 Pb Free Plating Product
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
G2300
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications.
Description
*Low on-resistance *Capable of 2.5V gate drive *Small Package Outline
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Ratings 20 8 6 4.8 20 1.25 0.01 -55 ~ +150 Value 100
Unit V V A A A W W/ : : Unit : /W
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
1/4
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 20 0.5 -
Typ. 0.1 10 3.6 2 8 6 19 7 550 120 80
Max. 1.0 100 1 25 28 38 -
Unit V V/ : V nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VGS= 8V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=6A VDS=10V VGS=4.5V VDD=10V ID=1A VGS=4.5V RG=0.2 VGS=0V VDS=15V f=1.0MHz
Gate Threshold Voltage Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage2 Symbol VSD Min. Typ. 0.7 Max. 1.3 Unit V Test Conditions IS=1.25A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
2/4
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
Characteristics Curve
Fig 1. Typical Output Characteristics
0.07 0.06 0.05 0.04 0.03 0.02 0.01 0
Fig 2. On-Resistance v.s. Drain Current Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Source-Drain Diode Forward Voltage
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Transfer Characteristics
Fig 10. Single Pulse Power
Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
4/4


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