 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES DIRECTREPLACEMENTFORINTERSIL3N163 ABSOLUTEMAXIMUMRATINGS1 @25C(unlessotherwisenoted) 65Cto+200C 55Cto+150C 375mW 50mA MaximumTemperatures StorageTemperature (See Packaging Information). OperatingJunctionTemperature MaximumPowerDissipation ContinuousPowerDissipation 3N163 Features: MAXIMUMCURRENT Very high Input Impedance DrainCurrent Low Capacitance MAXIMUMVOLTAGES High Gain DraintoGate High Gate Breakdown Voltage DraintoSource Low Threshold Voltage PeakGatetoSource2 3N163ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS IGSSF GateForwardCurrent 10 pA TA=+125C 25 BVDSS DraintoSourceBreakdownVoltage 40 BVSDS SourceDrainBreakdownVoltage 40 V VGS(th) GatetoSourceThresholdVoltage 2.0 5.0 2.0 5.0 VGS GateSourceVoltage 3.0 6.5 IDSS DrainLeakageCurrent"Off" 200 pA ISDS SourceDrainCurrent 400 rDS(on) DraintoSource"On"Resistance 250 ID(on) DrainCurrent"On" 5.0 30 mA gfs ForwardTransconductance 2000 4000 S gos OutputAdmittance 250 www..com 40V 40V 125V CONDITIONS VGS=40V,VDS=0V ID=10A,VGS=0V IS=10A,VGD=0V,VBD=0V VDS=VGS,ID=10A VDS=15V,ID=10A VDS=15V,ID=0.5mA VDS=15V,VGS=0V VDS=15V,VGS=VDB=0V VGS=20V,ID=100A VDS=15V,VGS=10V VDS=15V,ID=10mA,f=1kHz Ciss InputCapacitance-Outputshorted 2.5 3 pF VDS=15V,ID=10mA,f=1MHz Crss ReverseTransferCapacitance 0.7 Coss OutputCapacitanceInputShorted 3.0 SWITCHINGCHARACTERISTICSTA=25CandVBS=0unlessotherwisenotedTIMINGWAVEFORMS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) TurnOnDelayTime 12 VDD=15V ns ID(on)=10mA tr TurnOnRiseTime 24 3 RG=RL=1.4K toff TurnOffTime 50 SWITCHINGTESTCIRCUIT Click To Buy Available Packages: 3N163 in TO-72 3N163 in bare die. TO-72 (Bottom View) Note1Absolutemaximumratingsarelimitingvaluesabovewhich3N163serviceabilitymaybeimpaired. Note2-Devicemustnotbetestedat125Vmorethanonceorlongerthan300ms. Note3-Fordesignreferenceonly,not100%tested Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx |
Price & Availability of 3N163
 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
