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| PD - 91895 IRLL024N HEXFET(R) Power MOSFET l l l www..com l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065 G S ID = 3.1A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 4.4 3.1 2.5 12 2.1 1.0 8.3 16 120 3.1 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 6/15/99 IRLL024N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) www..com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 55 --- --- --- --- 1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.048 --- --- --- --- --- --- --- --- --- 10.4 1.5 5.5 7.4 21 18 25 510 140 58 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.065 VGS = 10V, ID = 3.1A 0.080 VGS = 5.0V, ID = 2.5A 0.100 VGS = 4.0V, ID = 1.6A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 1.9 A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 100 VGS = 16V nA -100 VGS = -16V 15.6 ID = 1.9A 2.3 nC VDS = 44V 8.3 VGS = 5.0V, See Fig. 6 and 9 --- VDD = 28V --- ID = 1.9A ns --- RG = 24 --- RD = 15 , See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol --- --- 3.1 showing the A integral reverse --- --- 12 p-n junction diode. --- --- 1.0 V TJ = 25C, IS = 1.9A, VGS = 0V --- 39 58 ns TJ = 25C, IF = 1.9A --- 63 94 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 1.9A, di/dt 270A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 25 mH RG = 25, IAS = 3.1A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRLL024N 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 I D , Drain-to-Source Current (A) www..com I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 10 10 2.7V 20s PULSE WIDTH TJ = 150 C 1 10 100 2.7V 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 3.1A I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 10 1.0 0.5 1 2 4 6 V DS = 25V 20s PULSE WIDTH 8 10 12 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLL024N 1000 VGS , Gate-to-Source Voltage (V) 800 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 1.9A 12 www..com C, Capacitance (pF) VDS = 44V VDS = 27V VDS = 11V 600 Ciss 9 400 6 200 Coss Crss 3 0 1 10 100 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 I D , Drain Current (A) 10 100us TJ = 150 C 1ms 1 1 10ms TJ = 25 C V GS = 0 V 0.6 0.8 1.0 1.2 1.4 0.1 0.4 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLL024N 4.0 VDS VGS RD D.U.T. + I D , Drain Current (A) 3.0 RG - VDD www..com 5.0V 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLL024N 300 EAS , Single Pulse Avalanche Energy (mJ) TOP 250 1 5V BOTTOM ID 1.4A 2.5A 3.1A 200 www..com VD S L D R IV E R 150 RG 10V tp D .U .T IA S + V - DD A 100 0.0 1 50 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D SS tp Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLL024N Package Outline SOT-223 (TO-261AA) Outline www..com Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M www.irf.com 7 IRLL024N Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) TR 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) www..com 7 .5 5 (.2 9 7 ) 7 .4 5 (.2 9 4 ) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 . 3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5.40 (.6 0 7 ) 1 1.90 (.4 6 9 ) 4 7 .1 0 (.2 79 ) 6 .9 0 (.2 72 ) 2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 ) 1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 ) 330.0 0 (13.000) M AX. 5 0.0 0 (1 .9 6 9 ) M IN . N O T ES : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 8 www.irf.com |
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