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GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode
LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC
Features
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm.
Package Dimensions
LTE-4238/LTE-4238C
Description
The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of silicon phototransistor.
ee DataSh
.com
LTE-5238A/LTE-5238AC
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice.
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10-26
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DataSheet 4 U .com
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Absolute Maximum Ratings at Ta =25
Parameter
Power Dissipation Peak Forward Current(300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse)
Maximum Rating
150 2 100 5 -40 -55 260 to +85 to +100 for 5 Seconds
Unit
mW A mA V
Electrical Optical Characteristics at Ta=25
Parameter Symbol Part No.
LTE-4238 LTE-4238C LTE-5238A LTE-5238AC LTE-4238 Radiant Intensity Ie LTE-4238C LTE-5238A LTE-5238AC Peak Emission Wavelength Spectral Line Half-Width Forward Voltage Reverse Current VF IR LTE-4238 View Angle (See Fig. 6) 2
1
Min.
0.80 0.08 6.0 6.0
Typ.
1.4
Max.
Unit
Test Condition
IF=20mA
t4U.com
*Aperture Radiant Incidence
Ee
mW/cm 2 1.0 10.5 mW/sr 7.5 880 50 1.3 1.8 100 nm nm V A
ee DataSh
INFRARED PRODUCTS
IF=20mA
Peak
IF=20mA IF=20mA IF=20mA VR=5V
.com
/2
LTE-4238C LTE-5238A LTE-5238AC
20 deg 40
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and centered on the mechanical axis of the lens and 26.8mm from lens.
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.com DataSheet 4 U .com
10-27
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Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted)
t4U.com
.com
.com
10-28
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DataSheet 4 U .com


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Price & Availability of LTE-4238
DigiKey

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LTE-4238
LTE-4238-ND
Lite-On Semiconductor Corporation EMITTER IR 880NM 100MA RADIAL 5000: USD0.22089
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Avnet Americas

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LTE-4238
LTE-4238
Lite-On Semiconductor Corporation LED IrLED 880nm 2-Pin T-1 3/4 - Bag (Alt: LTE-4238) 50000: USD0.2187
25000: USD0.22356
12000: USD0.23004
7000: USD0.24138
5000: USD0.24786
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Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
LTE-4238
859-LTE-4238
Lite-On Semiconductor Corporation Infrared Emitters Infrared 880nm 1: USD0.72
10: USD0.47
100: USD0.308
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2000: USD0.226
5000: USD0.218
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Future Electronics

Part # Manufacturer Description Price BuyNow  Qty.
LTE-4238
Lite-On Semiconductor Corporation Infrared Emitters Infrared 880nm 4000: USD0.215
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Quest Components

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LTE-4238
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TME

Part # Manufacturer Description Price BuyNow  Qty.
LTE-4238
LTE-4238
Lite-On Semiconductor Corporation IR transmitter; 5mm; 880nm; transparent; 20°; THT; 20mA; 1.3÷1.8V 5000: USD0.13
1000: USD0.15
100: USD0.18
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RFQ
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Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
LTE-4238
Diodes Incorporated RFQ
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