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om Devices Co.,Ltd. Shantou Huashanc . Electronic 4U et he NPN EPITAXIAL SILICON TRANSISTOR S 2W OUTPUTa AMPLIFIER OF PORTABLE RADIOS IN CLASS at B PUSH-PULL OPERATION. .D ABSOLUTE MAXIMUM RATINGST =25 w w wT ----Storage Temperature.............................. -55~150
a
stg
H8050
TO-92
Tj----Juncttion Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................40V VCEO----Collector-Emitter Voltage.................................25V
V EB O ----Emitter-Base Voltage....................................6V
I C ----Collector Current.............................................1.5A
ELECTRICAL CHARACTERISTICSTa=25
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage
ICBO IEBO HFE VBE VBE(sat) BVCBO BVCEO BVEBO Cob fT
VCE(sat Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product
w
B
w
w
t a .D
S a
85 40 40 25 6
Min
e h
Typ
U t4 e
Max Unit
.c
m o
1EmitterE 2BaseB 3Collector C
Test Conditions
0.1 0.1 500 1 0.5 1.2
A A
VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA
V V V V V V
VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100AIE=0 IC=2mAIB=0 IE=100AIC=0
9.0 100
hFE Classification
C 120--200 D 160--300
85--160
om pF VCB=10V,IE=0f=1MHz .c MHz VCE=10V, IC=50mA 4U et he S E ta a D 270--500 . w w w
Shantou Huashan Electronic Devices Co.,Ltd.
H8050

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