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| N P N S I L I C O N T RAN S I S T O R www..com Shantou Huashan Electronic Devices Co.,Ltd. H546 T stg Tj PC VCBO VCEO SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS Storage Temperature - - - - - Junction Temperature - - - - - - Collector Dissipation- - - Collector-Base Voltage- - - - - - Collector-Emitter Voltage- - - - - Emitter-Base Voltage - - - - - - - - - - - Collector Current - - - - - - - Ta=25ae(c) -55~150ae 150ae 500mW 80V 65V 6V 100mA TO-92 1D Collector C 2D Base B 3D Emitter E V EB O IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO HFE 1(c) 80 65 6 15 110 90 200 0.7 0.9 580 660 300 2.5 2 10 800 250 600 1 1.2 700 V V V nA mV mV V V mV MHz pF dB IC=100|I IE=1mA A, IE=0 IC=0 IC=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0 f=100MHz VCE=5V, IC=0.2Ma f=1KHz Rg=2K| DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance Noise Figure VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON) fT Cob NF hFE Classification A 110 220 200 B 450 420 C 800 N P N S I L I C O N T RAN S I S T O R www..com Shantou Huashan Electronic Devices Co.,Ltd. H546 |
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