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IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 20 50 100 50 100 400 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=50mA VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=600V IC=50A VGE= 15V RG=24 IF=50A VGE=0V IF=50A Min. Typ. Max. 1.0 15 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 8000 2900 2580 0.65 0.25 0.85 0.35 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.31 0.85 Units C/W 0.05 Collector current vs. Collector-Emitter voltage T j=25C 125 V GE =20V,15V,12V,10V 100 100 C Collector current vs. Collector-Emitter voltage T j=125C 125 V GE =20V,15V,12V,10V, C [A] Collector current : I 50 Collector current : I 75 [A] 75 50 8V 25 8V 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 100A 50A 25A 4 IC= 100A 50A 25A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, T j=25C 1000 t off t on 1000 Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=125C t off t on tf tr , t r , t off , t f [nsec] tf tr on on 100 , t r , t off , t f [nsec] 100 Switching time : t 10 0 25 50 Collector current : I C [A] 75 100 Switching time : t 10 0 25 50 Collector current : I C [A] 75 100 Switching time vs. R G V CC =600V, I C =50A, V GE =15V, T j=25C 1000 t off t on Dynamic input characteristics T j=25C 25 V CC =400V , t r , t off , t f [nsec] [V] CE 800 600V 800V 20 1000 tr tf Collector-Emitter voltage : V 600 15 Switching time : t on 400 10 200 100 5 10 Gate resistance : R G [ ] 100 0 0 200 400 600 0 Gate charge : Q G [nC] Forward current vs. Forward voltage V GE = O V 125 T j=125C 25C 1000 Reverse recovery characteristics t rr , I rr vs. I F [A] 100 [nsec] [A] t rr 125C t rr 25C 100 rr F Reverse recovery current : I Forward current : I 75 50 Reverse recovery time :t rr I rr 125C I rr 25C 25 0 0 1 2 3 4 5 10 0 25 50 Forward current : I F [A] 75 100 Forward voltage : V F [V] Transient thermal resistance 500 Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125C, R G >24 [C/W] 1 Diode C 400 th(j-c) Collector current : I IGBT [A] 300 SCSOA (non-repetitive pulse) Thermal resistance : R 0,1 200 100 RBSOA (Repetitive pulse) 0,01 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC =600V, R G =24 , V GE =15V 20 Capacitance vs. Collector-Emitter voltage T j=25C , E off , E rr [mJ/cycle] 15 , C oes , C res [nF] E on 125C E off 125C 10 C ies on E on 25C Switching loss : E Capacitance : C ies 10 1 C oes C res E off 25C 5 E rr 125C E rr 25C 0 0 25 50 Collector Current : I C [A] 75 100 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax) |
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