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| NTGS4141N Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6 Features * Low RDS(on) * Low Gate Charge * Pb-Free Package is Available Applications http://onsemi.com V(BR)DSS RDS(on) TYP 21.5 mW @ 10 V 30 V 30 mW @ 4.5 V 7.0 A ID MAX * Load Switch * Notebook PC * Desktop PC MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS EAS ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 30 20 5.0 3.6 7.0 1.0 2.0 3.5 2.5 0.5 21 -55 to 150 2.0 54 W A C A mJ A W Unit V V A N-Channel Drain 1 2 5 6 Gate 3 Source 4 MARKING DIAGRAM TSOP-6 CASE 318G STYLE 1 1 S4 MG G Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) S4 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 654 TL 260 C THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RJA RJA RJA Max 125 62.5 248 Unit C/W 1 23 Drain Drain Gate ORDERING INFORMATION Device NTGS4141NT1 NTGS4141NT1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0773 in sq). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 1 Publication Order Number: NTGS4141N/D NTGS4141N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 18.4 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 5.7 3.0 V mV/C VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 6.0 A 21.5 30 30 25 35 mW Forward Transconductance gFS VDS = 10 V, ID = 7.0 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN - SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25C TJ = 125C 0.78 0.63 15 VGS = 0 V dIS/dt = 100 A/ms, IS = 2.0 A 9.0 6.0 8.0 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 24 V, ID = 7.0 A, RG = 3.0 W 6.0 15 18 4.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 7.0 A VGS = 10 V, VDS = 15 V, ID = 7.0 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 560 115 75 12 0.85 1.9 3.0 6.0 0.8 1.85 3.0 2.8 W nC nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGS4141N TYPICAL PERFORMANCE CURVES 15 ID, DRAIN CURRENT (AMPS) 10 V 6V 4.5 V 10 TJ = 25C ID, DRAIN CURRENT (AMPS) 3.5 V 15 VDS 10 V 10 5 3V 5 125C 25C 0 TJ = -55C 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 2.6 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 TJ = 25C ID = 7 A 0.04 0.05 Figure 2. Transfer Characteristics TJ = 25C 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 5 10 15 ID, DRAIN CURRENT (AMPS) 0.03 0.02 0.01 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 7 A VGS = 10 V 1.5 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE CURRENT (nA) 1000 TJ = 150C 1.0 100 TJ = 125C 0.5 0 -50 10 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (C) 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS4141N TYPICAL PERFORMANCE CURVES VDS = 0 V C, CAPACITANCE (pF) 1000 800 600 400 Crss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Coss Ciss Ciss VGS = 0 V TJ = 25C VGS GATE-TO-SOURCE VOLTAGE (V) , 1200 10 QT 8 VGS 6 4 QGS QGD ID = 7 A VDD = 15 V TJ = 25C 2 0 0 2 4 6 8 10 QG, TOTAL GATE CHARGE (nC) 12 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 7 A VGS = 10 V t, TIME (ns) 100 tf tr 10 7 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C td(off) td(on) 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.9 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 60 Figure 10. Diode Forward Voltage vs. Current ID = 10.4 A 40 20 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C) 150 Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTGS4141N PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 3 HE E b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 DRAIN DRAIN GATE SOURCE DRAIN DRAIN MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTGS4141N/D |
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