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| IRFNJ5305 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) -55V -22A 0.065 3.05 (0.120) 1 3 10.16 (0.400) 0.76 (0.030) min. 5.72 (.225) 2 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) FEATURES 0.50 (0.020) max. * HERMETICALLY SEALED * SIMPLE DRIVE REQUIREMENTS SMD05 (TO-276AA) PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RJC Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case 20V -22A -16A -88A 75W 0.6W/C -55 to 150C 1.67C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5607 Issue 1 IRFNJ5305 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance VDS = VGS VDS -25V VDS = -55V VDS = -44V VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz VGS = -10V VDS = -44V ID = -16A VDD = -28V ID = -16A RG = 6.8 1290 495 203 70 17 30 26 125 56 74 -22* -88 IS = -16A VGS = 0 IS = -16A TJ = 25C di / dt -100A/s VDD -30V TJ = 25C -1.3 100 250 ns nC pF TJ = 125C ID = -250A IDS = -6A -2 8 -25 -250 -100 100 -4 Forward Transconductance Zero Gate Voltage Drain Current (VGS = 0) Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VGS = 0 ID = -1mA VGS = -10V ID = -16A ID = -250A Min. -55 Typ. Max. Unit V BVDSS Temperature Coefficient of Reference to 25C -0.049 0.065 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr A V ns nC * Current Limited by package Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5607Issue 1 |
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