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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION *High DC current gain *Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) *Complement to type PMD12K80 APPLICATIONS *Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -80 UNIT V Collector Current -Continuous Collector Current-Peak Base Current w ww scs .i -80 -5.0 -8 -16 -0.12 100 150 -65~200 .cn mi e V V A A A PC Tj Tstg Collector Power Dissipation@TC=50 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 1.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD13K80 MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -80 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 2.2k -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -16mA B -2.8 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -54V; RBE= 2.2K IEBO Emitter Cut-off current hFE DC Current Gain COB Output Capacitance w w scs .i w VEB= -5V; IC= 0 IC= -4A; VCE= -3V .cn mi e -5.0 mA -3.0 mA 800 20000 IE= 0; VCB= -10V; ftest= 1.0MHz 200 pF isc Websitewww.iscsemi.cn 2 |
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