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  Datasheet File OCR Text:
 January 2009
TLE4906K / TLE4906L
High Precision Hall Effect Switch
Data Sheet
V 2.0
Sensors
Edition 2009-01 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
TLE4906K TLE4906L
TLE4906K / TLE4906L High Precision Hall Effect Switch Revision History: 2009-01, V 2.0 Previous Version: 1.1 Page Subjects (major changes since last revision) Package type "H" changed to "K" General layout changed
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: sensors@infineon.com
Data Sheet
1
V 2.0, 2009-01
TLE4906K TLE4906L
Table of Contents
Table of Contents
1 1.1 1.2 1.3 2 2.1 2.2 2.3 2.4 2.5 3 3.1 3.2 3.3 4 4.1 4.2 4.3 Product Description 3 Overview 3 Features 3 Target Applications 3 Functional Description 4 General 4 Pin Configuration (top view) 4 Pin Description 4 Block Diagram 5 Functional Block Description 5 Specification 7 Absolute Maximum Ratings 7 Operating Range 8 Electrical and Magnetic Characteristics 9 Package Information 11 Package Outline 11 Distance between Chip and Package 13 Package Marking 13
Data Sheet
2
V 2.0, 2009-01
High Precision Hall-Effect Switch
TLE4906K TLE4906L
1
1.1
Product Description
Overview
The TLE4906 is a high precision Hall effect switch with highly accurate switching thresholds for operating temperatures up to 150C.
1.2
* * * * * * * * * * * *
Features
2.7V to 24V supply voltage Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18V) Superior temperature stability Peak temperatures up to 195C without damage Low jitter (typ. 1s) High ESD performance ( 6kV HBM) Digital output signal SMD package SC59 (SOT23 compatible) - (TLE4906K)) Leaded package PG-SSO-3-2 - (TLE4906L)
1.3
Target Applications
Target applications for TLE4906 are all automotive applications which require a high precision Hall switch for position sensing with a operating temperature range from -40C to +150C.
Product Name Hall Effect Switch Hall Effect Switch Data Sheet
Product Type TLE4906K TLE4906L 3
Ordering Code SP000475028 SP000012949
Package SC59 PG-SSO-3-2 V 2.0, 2009-01
TLE4906K TLE4906L
Functional Description
2
2.1
Functional Description
General
The TLE4906K and the TLE4906L are integrated circuit Hall-effect sensors designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip.
2.2
Pin Configuration (top view)
Center of Sensitive Area 2.08
0.1
3
1.35 0. 1
0.8
0.15
1
1.5
0.15
2 123 PG-SSO-3-2
SC59
Figure 1 Pin Configuration and Center of Sensitive Area
2.3
Table 1 Pin No. 1 2 3 Table 2 Pin No. 1 2 3
Pin Description
Pin Description SC59 Symbol VS Q GND Function Supply voltage Output Ground Comment
Pin Description PG-SSO-3-2 Symbol VS GND Q Function Supply voltage Ground Output Comment
Data Sheet
4
V 2.0, 2009-01
TLE4906K TLE4906L
Functional Description
2.4
Block Diagram
VS
Voltage Regulator reverse polarity protected
Bias and Compensation Circuits
Oscillator and Sequencer
Ref
Q
Amplifier Chopped Hall Probe
Low Pass Filter
Comparator with Hysteresis
GND
Figure 2
Functional Block Diagram
2.5
Functional Block Description
The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic switching points. .
Data Sheet
5
V 2.0, 2009-01
TLE4906K TLE4906L
Functional Description
B OP B RP
Applied Magnetic Field
td VQ 90% tf
td tr
10%
Figure 3
Timing Diagram
VQ
B 0 Brp Bop
Figure 4
Output Signal
Data Sheet
6
V 2.0, 2009-01
TLE4906K TLE4906L
Specification
3
3.1
Table 3 Parameter
Specification
Absolute Maximum Ratings
Absolute Maximum Rating Parameters Tj = -40C to 150C Symbol VS -18 -18 -18 -50 -0.7 -0.7 -50 - - - - -40 - Limit Values Min. Max. 18 24 26 50 18 26 50 155 165 175 195 150 V for 1h, RS 200 for 5min, RS 200 mA V for 5min @ 1.2k pull up mA C for 2000h (not additive) for 1000h (not additive) for 168h (not additive) for 3 x 1h (additive) Unit Note / Test Condition
Supply voltage
Supply current through protection device Output voltage Continuous output current Junction temperature
IS VQ IQ Tj
Storage temperature Magnetic flux density
TS B
C
unlimited mT
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 4 Parameter ESD Voltage ESD Protection1) Symbol VESD Limit Values Min. Max. 6 kV HBM, R = 1.5k, C = 100pF TA = 25C Unit Note / Test Condition
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Data Sheet
7
V 2.0, 2009-01
TLE4906K TLE4906L
Specification
3.2
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4906K / TLE4906L. All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned. Table 5 Parameter Supply voltage Output voltage Junction temperature Output current Operating Conditions Parameters Symbol Min. VS VQ Tj IQ 2.7 -0.7 -40 0 Values Typ. Max. 18 18 150 20 V V C mA Unit Note / Test Condition
Data Sheet
8
V 2.0, 2009-01
TLE4906K TLE4906L
Specification
3.3
Electrical and Magnetic Characteristics
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. Typical characteristics are the median of the production. Table 6 Parameter Supply current Reverse current Output saturation voltage Output leakage current Output fall time Output rise time Chopper frequency Switching frequency Delay time
3) 4)
General Electrical Characteristics1) Symbol Min. IS ISR VQSAT IQLEAK tf tr fOSC fSW td tQJ tPON
6)
Values Typ. 4 0.2 0.3 0.05 0.02 0.4 320 13 1 13 100 Max. 6 1 0.6 10 1 1 15 190
2)
Unit mA mA V A s s kHz kHz s
Note / Test Condition VS = 2.7V ... 18V VS = -18V IQ = 20mA for VQ = 18V RL = 1.2k; CL = 50pF see Figure 3
2 0 0 -
Output jitter
sRMS typical value for square wave signal with 1kHz s K/W VS 2.7V SC59 PG-SSO-3-2
Power-on time5) Thermal resistance
RthJA
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25C 2) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 3) Systematic delay between magnetic threshold reached and output switching. 4) Jitter is the unpredictable deviation of the output switching delay. 5) Time from applying VS 2.7V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient.
Calculation of the ambient temperature (SC59 example) e.g. for VS = 12.0V, IStyp = 4mA, VQSATtyp = 0.3V and IQ = 20mA Power dissipation PDIS = 54.0mW In TA = Tj - (RthJA x PDIS) = 175C - (100K/W x 0.054W) Resulting max. ambient temperature: TA = 169.6C
Data Sheet
9
V 2.0, 2009-01
TLE4906K TLE4906L
Specification
Table 7 Parameter
Magnetic Characteristics1)
Symbol BOP
Tj[C] Min. -40 25 150 -40 25 150 -40 25 150 6.7 6.5 6.2 5.2 5.0 4.7 0.7 -
Values Typ. 10.3 10.0 9.5 8.7 8.5 8.1 1.5 -350 20 Max. 13.9 13.5 12.9 12.3 12.0 11.4 3.0 -
Unit mT
Note / Test Condition
Operating point
Release point
BRP
mT
Hysteresis
BHYS
mT
Temperature compensation of magnetic thresholds Repeatability of magnetic thresholds2)
TC BREP
ppm/C TRMS typ. value for B/t > 12mT/ms
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25C. 2) BREP is equivalent to the noise constant
Note: Typical characteristics specify mean values expected over the production spread Field Direction Definition Positive magnetic fields are defined with the south pole of the magnet to the branded side of package.
N S Branded Side
N S Branded Side
Figure 5
Definition of magnetic field direction (left: SC59, right: PG-SSO-3-2)
Data Sheet
10
V 2.0, 2009-01
TLE4906K TLE4906L
Package Information
4
4.1
Package Information
Package Outline
1.1 0.1 3 0.1 3x0.4 +0.05 -0.1 3 0.1 M 0.1 0.15 MAX. 0.2
+0.1
0.45 0.15
1 0.95
2 0.95 (0.55)
0.1 M
+0.1 0.15 -0.05
0...8 MAX.
GPS09473
Figure 6
SC59 Package Outline (all dimensions in mm)
The following picture shows a recommendation for the PCB layout.
0.8 0.9
0.8 1.4 min 1.2 0.8
11
1.3
1.6 +0.15 -0.3
2.8 +0.2 -0.1
0.9
1.2 0.8
Figure 7
Wave Soldering Reflow Soldering SC59 Footprint (SOT23 compatible, all dimensions in mm)
Data Sheet
1.4 min
1.6
V 2.0, 2009-01
TLE4906K TLE4906L
Package Information
0.8 0.1 x 45
7 4.160.05
0.15 MAX.
3 0.06
1.9 MAX.
3.29 0.08
4.060.08
0.2
2A 1.520.05
0.35 0.1 x 45
(0.25)
1 MAX. 1)
0.6 MAX. 0.4 0.05
(0.79) 0.2 +0.1
1.270.25
1
2
3
1.270.25 12.7 1
23.8 0.5
38 MAX.
7
9 +0.75 -0.5
18 0.5
6 0.5
A
6.350.4 12.70.3 1) N o s older func tion area
4 0.3 Total toleranc e at 10 pitc hes 1
0.25-0.15 0.39 0.1
GP O05358
Figure 8 Data Sheet
PG-SSO-3-2 Package Outline (All dimensions in mm) 12 V 2.0, 2009-01
1-1
Adhes iv e Tape Tape
TLE4906K TLE4906L
Package Information
4.2
Distance between Chip and Package
d
Branded Side
Hall-Probe
d : Distance chip to upper side of IC PG-SSO-3-2 : 0.57 0.08 mm
AEA02510-1
Figure 9
Distance between chip and package PG-SSO-3-2
Branded Side d d: Distance chip to upper side of IC SC59: 0.56 0.1 mm
AEA03244
Figure 10
Distance between chip and package SC59
4.3
Package Marking
06
Year (y) = 0...9 Month (m) = 1...9, O - October N - November D - December
AEA03641
Figure 11
Marking of TLE4906K
Data Sheet
ym
13
V 2.0, 2009-01
TLE4906K TLE4906L
Package Information
S
Figure 12
Marking of TLE4906L
Data Sheet
06L
yww
Year (y) = 0...9 Calendar Week (ww) = 01...52
14
V 2.0, 2009-01
www.infineon.com
Published by Infineon Technologies AG


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